Effect of Substrate Composition on the Piezoelectric Response of Reactively Sputtered AlN Thin Films

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Deposition parameters were found to have a marked effect on piezoelectric response of reactive radio frequency (RF) sputtered AlN thin films. The authors observed peizoelectric response values ranging from {minus}3.5 to +4.2 pm/V for 1 {micro}m thick AlN films deposited onto Ti/Ru electrode stacks. An investigation of the effects of deposition parameters, in particular the nature of the Ru/AlN interface, was conducted. The lag time between deposition of adjacent thin film layers appeared to have the greatest affect on the value of the piezoelectric response. This suggests that chemical reaction occurring on the Ru thin film surface is responsible for ... continued below

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Clem, P.G.; Dimos, D.B.; Gonzales, D.M.; Ruffner, J.A. & Tuttle, B.A. April 21, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Deposition parameters were found to have a marked effect on piezoelectric response of reactive radio frequency (RF) sputtered AlN thin films. The authors observed peizoelectric response values ranging from {minus}3.5 to +4.2 pm/V for 1 {micro}m thick AlN films deposited onto Ti/Ru electrode stacks. An investigation of the effects of deposition parameters, in particular the nature of the Ru/AlN interface, was conducted. The lag time between deposition of adjacent thin film layers appeared to have the greatest affect on the value of the piezoelectric response. This suggests that chemical reaction occurring on the Ru thin film surface is responsible for changing an important thin film property such as dipole orientation within the overlying AlN thin film.

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Medium: P; Size: vp.

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OSTI as DE00005904

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  • Journal Name: Thin Solid Films; Other Information: Submitted to Thin Solid Films

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  • Report No.: SAND99-0994J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 5904
  • Archival Resource Key: ark:/67531/metadc691884

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  • April 21, 1999

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  • Aug. 14, 2015, 8:43 a.m.

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  • April 12, 2016, 2:01 p.m.

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Clem, P.G.; Dimos, D.B.; Gonzales, D.M.; Ruffner, J.A. & Tuttle, B.A. Effect of Substrate Composition on the Piezoelectric Response of Reactively Sputtered AlN Thin Films, article, April 21, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc691884/: accessed September 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.