The effects of irradiation and proton implantation on the density of mobile protons in SiO{sub 2} films

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Description

Proton implantation into the buried oxide of Si/SiO{sub 2}/Si structures does not introduce mobile protons. The cross section for capture of radiation-induced electrons by mobile protons is two orders of magnitude smaller than for electron capture by trapped holes. The data provide new insights into the atomic mechanisms governing the generation and radiation tolerance of mobile protons in SiO{sub 2}. This can lead to improved techniques for production and radiation hardening of radiation tolerant memory devices.

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7 p.

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Vanheusden, K.; Fleetwood, D. M.; Schwank, J. R.; Shaneyfelt, M. R.; Meisenheimer, T. L. & Draper, B. L. April 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Proton implantation into the buried oxide of Si/SiO{sub 2}/Si structures does not introduce mobile protons. The cross section for capture of radiation-induced electrons by mobile protons is two orders of magnitude smaller than for electron capture by trapped holes. The data provide new insights into the atomic mechanisms governing the generation and radiation tolerance of mobile protons in SiO{sub 2}. This can lead to improved techniques for production and radiation hardening of radiation tolerant memory devices.

Physical Description

7 p.

Notes

INIS; OSTI as DE98004955

Source

  • IEEE nuclear and space radiation effects conference, Newport Beach, CA (United States), 20-24 Jul 1998

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  • Other: DE98004955
  • Report No.: SAND--98-0914C
  • Report No.: CONF-980705--
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/645601 | External Link
  • Office of Scientific & Technical Information Report Number: 645601
  • Archival Resource Key: ark:/67531/metadc691856

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  • April 1998

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • May 16, 2016, 11:42 a.m.

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Vanheusden, K.; Fleetwood, D. M.; Schwank, J. R.; Shaneyfelt, M. R.; Meisenheimer, T. L. & Draper, B. L. The effects of irradiation and proton implantation on the density of mobile protons in SiO{sub 2} films, report, April 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc691856/: accessed September 26, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.