The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition

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We describe the metal-organic chemical vapor deposition os InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500 {degrees}C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH{sub 3}, and PH{sub 3}. By changing the layer thickness and composition we have prepared structures with low temperature ({le}20K) photoluminescence wavelengths ranging from 3.2 to 5.0 {mu}m. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS layers. An InAsSb/InAsP SLS injection laser emitted at 3.3 {mu}m at 80 K with peak power ... continued below

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5 p.

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Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R. & Burkhart, J.H. October 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

We describe the metal-organic chemical vapor deposition os InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500 {degrees}C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH{sub 3}, and PH{sub 3}. By changing the layer thickness and composition we have prepared structures with low temperature ({le}20K) photoluminescence wavelengths ranging from 3.2 to 5.0 {mu}m. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS layers. An InAsSb/InAsP SLS injection laser emitted at 3.3 {mu}m at 80 K with peak power of 100 mW.

Physical Description

5 p.

Notes

INIS; OSTI as DE98000048

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  • 24. international symposium on compound semiconductors, San Diego, CA (United States), 7-11 Sep 1997

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  • Other: DE98000048
  • Report No.: SAND--97-2166C
  • Report No.: CONF-970947--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 532643
  • Archival Resource Key: ark:/67531/metadc691816

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  • October 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • May 5, 2016, 8:30 p.m.

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Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R. & Burkhart, J.H. The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition, article, October 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc691816/: accessed December 14, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.