Silicon photodiode characterization from 1 eV to 10 keV Page: 1 of 11
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Silicon photodiode characterization from 1 eV to 10 keV
G. C. Idzorek and R J. Bartlett, P-22
- STRIUTON OF THIS DOCUMENT IS UNL'4TED
SPIE: Optical Science, Engineering, and Instrumentation conference
Jul 27 -Aug 1, 1997 in San Diego, CA
Los Alamos National Laboratory, an affirmative sctionlequal opportunity empldyer, is operated by the University of Califomia for the U.S. Department of Energy
under contract W-7405-ENG-36. By acceptance of this article, the publisher recognizes that the U.S. Government retains a nonexclusive, royalty-free license to
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Foifi No. 836 R
ST 262 iOi
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Idzorek, G.C. & Bartlett, R.J. Silicon photodiode characterization from 1 eV to 10 keV, article, October 1, 1997; New Mexico. (digital.library.unt.edu/ark:/67531/metadc691779/m1/1/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.