The effect of oxidations on phosphorus-diffused crystalline-silicon substrates

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The authors examined the effect of oxidation on phosphorus-diffused crystalline-silicon p-type substrates. Oxidations subsequent to the phosphorus diffusion are of interest for passivating surfaces, and are commonly found in both high-efficiency laboratory-cell and commercial-cell fabrication sequences. The authors found a degradation of the bulk lifetime due to the oxidation in a variety of crystalline-silicon substrates that were diffused in various laboratories. The degradation was avoided if there was aluminum present on the back surface of the wafer during the oxidation. The study suggests that impurities gettered during the phosphorus diffusion can be released back into the bulk during a subsequent ... continued below

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4 p.

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Gee, J.M.; King, R.R.; Reiss, J.H.; Mitchell, K.W. & Narayanan, S. August 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The authors examined the effect of oxidation on phosphorus-diffused crystalline-silicon p-type substrates. Oxidations subsequent to the phosphorus diffusion are of interest for passivating surfaces, and are commonly found in both high-efficiency laboratory-cell and commercial-cell fabrication sequences. The authors found a degradation of the bulk lifetime due to the oxidation in a variety of crystalline-silicon substrates that were diffused in various laboratories. The degradation was avoided if there was aluminum present on the back surface of the wafer during the oxidation. The study suggests that impurities gettered during the phosphorus diffusion can be released back into the bulk during a subsequent oxidation, and that the aluminum suppressed the bulk lifetime degradation by reabsorbing these released impurities.

Physical Description

4 p.

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OSTI as DE97007271

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  • 14. European photovoltaic solar energy conference and exhibition, Barcelona (Spain), 30 Jun - 4 Jul 1997

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  • Other: DE97007271
  • Report No.: SAND--97-0076C
  • Report No.: CONF-970640--1
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 515619
  • Archival Resource Key: ark:/67531/metadc691431

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  • August 1, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 7:37 p.m.

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Gee, J.M.; King, R.R.; Reiss, J.H.; Mitchell, K.W. & Narayanan, S. The effect of oxidations on phosphorus-diffused crystalline-silicon substrates, article, August 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc691431/: accessed September 26, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.