Evaluation of post-ashed photoresist cleaning using oxidizing chemistries

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The use of sulfuric acid based chemistries for the removal of photoresist ashing residue was investigated. Samples were prepared by ion-implanting patterned, UV-hardened photoresist. The efficacy of post-ash cleaning was determined by measuring organic, metallic, and particulate surface concentrations. Sulfuric-nitric mixtures and sulfuric-hydrogen peroxide mixtures were highly effective for the removal of metallic contaminants. Neither chemistry was very effective for particulate and organic residue. Highly effective overall cleaning was observed when a sulfuric acid based clean was followed with an RCA-type process sequence. Redundant cleans provided no additional benefits. Post-ash cleaning may be simplified by either reducing the number of ... continued below

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8 p.

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Resnick, P.J. & Matlock, C.A. August 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The use of sulfuric acid based chemistries for the removal of photoresist ashing residue was investigated. Samples were prepared by ion-implanting patterned, UV-hardened photoresist. The efficacy of post-ash cleaning was determined by measuring organic, metallic, and particulate surface concentrations. Sulfuric-nitric mixtures and sulfuric-hydrogen peroxide mixtures were highly effective for the removal of metallic contaminants. Neither chemistry was very effective for particulate and organic residue. Highly effective overall cleaning was observed when a sulfuric acid based clean was followed with an RCA-type process sequence. Redundant cleans provided no additional benefits. Post-ash cleaning may be simplified by either reducing the number of sulfuric acid based cleans, or for certain post-ash applications, by replacing them with RCA-type processes.

Physical Description

8 p.

Notes

OSTI as DE97008364

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  • 192. meeting of the Electrochemical Society and 48. annual meeting of the International Society of Electrochemistry, Paris (France), 31 Aug - 5 Sep 1997

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  • Other: DE97008364
  • Report No.: SAND--97-1956C
  • Report No.: CONF-970805--4
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 563165
  • Archival Resource Key: ark:/67531/metadc691361

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • August 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 7:38 p.m.

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Resnick, P.J. & Matlock, C.A. Evaluation of post-ashed photoresist cleaning using oxidizing chemistries, article, August 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc691361/: accessed November 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.