Interfaces and defects in opto-electronic semiconductor films studies by atomic resolution stem

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The growth of thin films on dissimilar substrates is of great technological importance for modern optoelectronic devices. However, device applications are currently limited by lattice mismatches between the film and substrate that invariably lead to defects detrimental to device performance. It is therefore of key importance that the mechanisms leading to the formation of these defects are understood on the fundamental atomic level. Correlated atomic resolution Z-contrast imaging and EELS in the STEM is a unique methodology by which this information can be obtained. In this paper, the application of this methodology to determine a novel graphoepitaxial growth mechanism for ... continued below

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3 p.

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Xin, Y.; Wallis, D.J. & Browning, N.D. April 1, 1997.

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Description

The growth of thin films on dissimilar substrates is of great technological importance for modern optoelectronic devices. However, device applications are currently limited by lattice mismatches between the film and substrate that invariably lead to defects detrimental to device performance. It is therefore of key importance that the mechanisms leading to the formation of these defects are understood on the fundamental atomic level. Correlated atomic resolution Z-contrast imaging and EELS in the STEM is a unique methodology by which this information can be obtained. In this paper, the application of this methodology to determine a novel graphoepitaxial growth mechanism for CdTe on (001)Si is demonstrated, and its potential for the study of GaN is discussed.

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3 p.

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OSTI as DE97005138

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  • Microscopy and Microanalysis `97, Cleveland, OH (United States), 10-14 Aug 1997

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  • Other: DE97005138
  • Report No.: CONF-970834--17
  • Grant Number: AC05-96OR22464;FG02-96ER45610
  • Office of Scientific & Technical Information Report Number: 503476
  • Archival Resource Key: ark:/67531/metadc691359

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Office of Scientific & Technical Information Technical Reports

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  • April 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • May 2, 2016, 3:57 p.m.

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Xin, Y.; Wallis, D.J. & Browning, N.D. Interfaces and defects in opto-electronic semiconductor films studies by atomic resolution stem, article, April 1, 1997; Tennessee. (digital.library.unt.edu/ark:/67531/metadc691359/: accessed November 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.