Novel low-permittivity dielectrics for Si-based microelectronics

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The purpose of this laboratory-directed research and development (LDRD) project was to develop and assess novel low-permittivity dielectric materials for applications as interlevel dielectrics (ILDs) in Si-based microelectronics. There were three classes of materials investigated: (1) novel covalently-bonded ceramics containing carbon, boron, and/or nitrogen, (2) fluorinated SiO{sub 2} (SiOF), and (3) plasma polymerized fluorocarbon (PPFC). The specific advantages and disadvantages for each potential low k ILD material were evaluated. It was discovered that highly energetic deposition processes are required for the formation of thermally and environmentally stable carbon or boron nitride ceramics, and the resulting films may have many potentially ... continued below

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47 p.

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Sullivan, J.P. September 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The purpose of this laboratory-directed research and development (LDRD) project was to develop and assess novel low-permittivity dielectric materials for applications as interlevel dielectrics (ILDs) in Si-based microelectronics. There were three classes of materials investigated: (1) novel covalently-bonded ceramics containing carbon, boron, and/or nitrogen, (2) fluorinated SiO{sub 2} (SiOF), and (3) plasma polymerized fluorocarbon (PPFC). The specific advantages and disadvantages for each potential low k ILD material were evaluated. It was discovered that highly energetic deposition processes are required for the formation of thermally and environmentally stable carbon or boron nitride ceramics, and the resulting films may have many potentially valuable applications, such as diffusion barriers, tribological coatings, micro-sensor materials, etc. The films are not suitable as low k ILDs, however, because the highly energetic deposition process leads to films with high atomic density, and this leads to high dielectric constants. SiOF shows a promise as low k ILD material for near-term applications, but special passivation or encapsulation strategies may be required in order to reduce two instability problems that the authors have discovered: moisture absorption and thermal instability of the SiOF/Al interface. PPFC films offer promise for even lower dielectric constant ILDs than SiOF, but it will be necessary to develop new strategies to passivate the free radicals in the films generated during deposition. These free radicals lead to increase in dielectric loss over time when the films are exposed to room ambient conditions.

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47 p.

Notes

OSTI as DE98000114

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  • Other Information: PBD: Sep 1997

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  • Other: DE98000114
  • Report No.: SAND--97-2092
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/534493 | External Link
  • Office of Scientific & Technical Information Report Number: 534493
  • Archival Resource Key: ark:/67531/metadc691199

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  • September 1, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 7:57 p.m.

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Sullivan, J.P. Novel low-permittivity dielectrics for Si-based microelectronics, report, September 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc691199/: accessed December 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.