Implantation processing of Si: A unified approach to understanding ion-induced defects and their impact

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Description

A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel ... continued below

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10 p.

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Holland, O. W. & Roth, E. G. May 1997.

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Description

A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel pairs recombine either dynamically or during a post-implantation annealing. Based upon this model, a method will be demonstrated for manipulating or engineering the excess defects to modify their effects. In particular high-energy, self-ions are shown to inject vacancies into a boron implanted region resulting in suppression of transient enhanced diffusion of the dopant.

Physical Description

10 p.

Notes

INIS; OSTI as DE97006311

Source

  • International conference on materials and process characterization for VSLI, Shanghai (China), 4-7 Nov 1997

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  • Other: DE97006311
  • Report No.: CONF-971132--2
  • Grant Number: AC05-96OR22464;AC05-76OR00033
  • DOI: 10.2172/537366 | External Link
  • Office of Scientific & Technical Information Report Number: 537366
  • Archival Resource Key: ark:/67531/metadc691185

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Creation Date

  • May 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • Jan. 25, 2016, 12:48 p.m.

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Holland, O. W. & Roth, E. G. Implantation processing of Si: A unified approach to understanding ion-induced defects and their impact, report, May 1997; Tennessee. (digital.library.unt.edu/ark:/67531/metadc691185/: accessed August 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.