In situ reflectance and virtual interface analysis for compound semiconductor process control

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Description

The authors review the use of in-situ normal incidence reflectance, combined with a virtual interface model, to monitor and control the growth of complex compound semiconductor devices. The technique is being used routinely on both commercial and research metal-organic chemical vapor deposition (MOCVD) reactors and in molecular beam epitaxy (MBE) to measure growth rates and high temperature optical constants of compound semiconductor alloys. The virtual interface approach allows one to extract the calibration information in an automated way without having to estimate the thickness or optical constants of the alloy, and without having to model underlying thin film layers. The ... continued below

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11 p.

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Breiland, W.G.; Hou, H.Q.; Hammons, B.E. & Klem, J.F. May 1, 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 18 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

The authors review the use of in-situ normal incidence reflectance, combined with a virtual interface model, to monitor and control the growth of complex compound semiconductor devices. The technique is being used routinely on both commercial and research metal-organic chemical vapor deposition (MOCVD) reactors and in molecular beam epitaxy (MBE) to measure growth rates and high temperature optical constants of compound semiconductor alloys. The virtual interface approach allows one to extract the calibration information in an automated way without having to estimate the thickness or optical constants of the alloy, and without having to model underlying thin film layers. The method has been used in a variety of data analysis applications collectively referred to as ADVISOR (Analysis of Deposition using Virtual Interfaces and Spectroscopic Optical Reflectance). This very simple and robust monitor and ADVISOR method provides one with the equivalent of a real-time reflection high energy electron reflectance (RHEED) tool for both MBE and MOCVD applications.

Physical Description

11 p.

Notes

OSTI as DE98003343

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  • 193. meeting of the Electrochemical Society, Inc., San Diego, CA (United States), 3-8 May 1998

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  • Other: DE98003343
  • Report No.: SAND--98-0619C
  • Report No.: CONF-980504--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 642798
  • Archival Resource Key: ark:/67531/metadc691166

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  • May 1, 1998

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  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 8:34 p.m.

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Breiland, W.G.; Hou, H.Q.; Hammons, B.E. & Klem, J.F. In situ reflectance and virtual interface analysis for compound semiconductor process control, article, May 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc691166/: accessed October 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.