X-ray standing wave investigations of Group III and V metal adsorption on Si(001)

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Investigations of atomic bonding, surface reconstruction, surface dynamics, and growth kinetics of group III and V metals on Si(001) are important for understanding the initial growth stage of III-V semiconductors on Si(001). Such studies can also provide valuable information for other important issues such as surfactant-mediated epitaxy, surface passivation and delta-doping layers. X-ray standing waves generated by dynamical Bragg diffraction were used as an element-specific structural probe for investigating Ga and Sb adsorption on Si(001). These high-resolution measurements reveal important quantitative structural information regarding the dimerized surface structures, and provide a stringent test for structural models proposed by various theoretical ... continued below

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35 p.

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Qian, Y.; Bedzyk, M.J. & Lyman, P.F. May 1, 1997.

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Description

Investigations of atomic bonding, surface reconstruction, surface dynamics, and growth kinetics of group III and V metals on Si(001) are important for understanding the initial growth stage of III-V semiconductors on Si(001). Such studies can also provide valuable information for other important issues such as surfactant-mediated epitaxy, surface passivation and delta-doping layers. X-ray standing waves generated by dynamical Bragg diffraction were used as an element-specific structural probe for investigating Ga and Sb adsorption on Si(001). These high-resolution measurements reveal important quantitative structural information regarding the dimerized surface structures, and provide a stringent test for structural models proposed by various theoretical calculations. An overview of the X-ray standing wave technique and its application to surface structure and dynamics is presented.

Physical Description

35 p.

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OSTI as DE97008119

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  • Other Information: PBD: May 1997

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  • Other: DE97008119
  • Report No.: ANL/MSD/PP--86693
  • Grant Number: W-31109-ENG-38
  • DOI: 10.2172/510296 | External Link
  • Office of Scientific & Technical Information Report Number: 510296
  • Archival Resource Key: ark:/67531/metadc691079

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  • May 1, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • Dec. 15, 2015, 11:41 a.m.

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Qian, Y.; Bedzyk, M.J. & Lyman, P.F. X-ray standing wave investigations of Group III and V metal adsorption on Si(001), report, May 1, 1997; Illinois. (digital.library.unt.edu/ark:/67531/metadc691079/: accessed October 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.