Silicon photodiode soft x-ray detectors for pulsed power experiments

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Silicon photodiodes offer a number of advantages over conventional photocathode type soft x-ray detectors in pulsed power experiments. These include a nominally flat response, insensitivity to surface contamination, low voltage biasing requirements, sensitivity to low energy photons, excellent detector to detector response reproducibility, and ability to operate in poor vacuum or gas backfilled experiments. Silicon photodiodes available from International Radiation Detectors (IRD), Torrance, California have been characterized for absolute photon response from 1 eV to 10 keV photon energy, time response, and signal saturation levels. The authors calibration measurements show factor of ten deviations from the silicon photodiode theoretical flat ... continued below

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8 p.

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Idzorek, G.C. & Bartlett, R.J. October 1, 1997.

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Description

Silicon photodiodes offer a number of advantages over conventional photocathode type soft x-ray detectors in pulsed power experiments. These include a nominally flat response, insensitivity to surface contamination, low voltage biasing requirements, sensitivity to low energy photons, excellent detector to detector response reproducibility, and ability to operate in poor vacuum or gas backfilled experiments. Silicon photodiodes available from International Radiation Detectors (IRD), Torrance, California have been characterized for absolute photon response from 1 eV to 10 keV photon energy, time response, and signal saturation levels. The authors calibration measurements show factor of ten deviations from the silicon photodiode theoretical flat response due to diode sensitivity outside the center `sensitive area`. Detector response reproducibility between diodes appears to be better than 5%. Time response measurements show a 10-90% rise time of about 0.1 nanoseconds and a fall time of about 0.5 nanoseconds.

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8 p.

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OSTI as DE98000249

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  • 11. IEEE international pulsed power conference, Baltimore, MD (United States), 29 Jun - 2 Jul 1997

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  • Other: DE98000249
  • Report No.: LA-UR--97-2283
  • Report No.: CONF-9706113--
  • Grant Number: W-7405-ENG-36
  • Office of Scientific & Technical Information Report Number: 539836
  • Archival Resource Key: ark:/67531/metadc691063

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  • October 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • Feb. 26, 2016, 5:41 p.m.

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Idzorek, G.C. & Bartlett, R.J. Silicon photodiode soft x-ray detectors for pulsed power experiments, article, October 1, 1997; New Mexico. (digital.library.unt.edu/ark:/67531/metadc691063/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.