Comparison of F(2)-Based Gases for High-Rate Dry Etching of Si

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Four different F{sub 2}-based gases (SF{sub 6}, NF{sub 3}, PF{sub 5}, and BF{sub 3}) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to {approximately}8 {micro}m/min were achieved with pure SF{sub 6} discharges at high source power (1500W) and pressure (35mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order BF{sub 3} < NF{sub 3} < PF{sub 5} < SF{sub 6}. This is in good correlation with the average bond energies of the gases, except for NF{sub 3}, which is the ... continued below

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25 p.

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Donahue, J.; Hahn, Y.B.; Hays, D.C.; Johnson, D.; Jung, K.B.; Lambers, E.S. et al. March 31, 1999.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 14 times . More information about this article can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

Four different F{sub 2}-based gases (SF{sub 6}, NF{sub 3}, PF{sub 5}, and BF{sub 3}) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to {approximately}8 {micro}m/min were achieved with pure SF{sub 6} discharges at high source power (1500W) and pressure (35mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order BF{sub 3} < NF{sub 3} < PF{sub 5} < SF{sub 6}. This is in good correlation with the average bond energies of the gases, except for NF{sub 3}, which is the least strongly bound. Optical emission spectroscopy showed that the ICP source efficiently dissociated NF{sub 3}, but the etched Si surface morphologies were significantly worse with this gas than with the other 3 gases.

Physical Description

25 p.

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OSTI as DE00005660

Medium: P; Size: 25 pages

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  • Journal Name: Journal of Electrochemistry Society; Other Information: Submitted to Journal of Electrochemistry Society

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  • Report No.: SAND99-0754J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 5660
  • Archival Resource Key: ark:/67531/metadc691023

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  • March 31, 1999

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  • Aug. 14, 2015, 8:43 a.m.

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  • April 10, 2017, 6:05 p.m.

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Donahue, J.; Hahn, Y.B.; Hays, D.C.; Johnson, D.; Jung, K.B.; Lambers, E.S. et al. Comparison of F(2)-Based Gases for High-Rate Dry Etching of Si, article, March 31, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc691023/: accessed August 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.