Using heavy ion backscattering spectrometry (HIBS) to solve integrated circuit manufacturing problems

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Heavy Ion Backscattering Spectrometry (HIBS) is a new IBA tool for measuring extremely low levels of surface contamination on very pure substrates, such as Si wafers used in the manufacture of integrated circuits. HIBS derives its high sensitivity through the use of moderately low energy ({approximately} 100 keV) heavy ions (e.g., C{sup 12}) to boost the RBS cross-section to levels approaching 1,000 barns, and by using specially designed time-of-flight detectors which have been optimized to provide a large scattering solid angle with minimal kinematic broadening. A HIBS User Facility has been created which provides US industry, national laboratories, and universities ... continued below

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16 p.

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Banks, J.C.; Doyle, B.L.; Knapp, J.A.; Werho, D.; Gregory, R.B.; Anthony, M. et al. December 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Heavy Ion Backscattering Spectrometry (HIBS) is a new IBA tool for measuring extremely low levels of surface contamination on very pure substrates, such as Si wafers used in the manufacture of integrated circuits. HIBS derives its high sensitivity through the use of moderately low energy ({approximately} 100 keV) heavy ions (e.g., C{sup 12}) to boost the RBS cross-section to levels approaching 1,000 barns, and by using specially designed time-of-flight detectors which have been optimized to provide a large scattering solid angle with minimal kinematic broadening. A HIBS User Facility has been created which provides US industry, national laboratories, and universities with a place for conducting ultra-trace level surface contamination studies. A review of the HIBS technique is given and examples of using the facility to calibrate Total-Reflection X-ray Fluorescence Spectroscopy (TXRF) instruments and develop wafer cleaning processes are discussed.

Physical Description

16 p.

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INIS; OSTI as DE98001699

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  • 13. international conference on ion beam analysis (IBA-13), Lisbon (Portugal), 27 Jul - 1 Aug 1997

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  • Other: DE98001699
  • Report No.: SAND--97-3114C
  • Report No.: CONF-970785--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 563180
  • Archival Resource Key: ark:/67531/metadc690784

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Office of Scientific & Technical Information Technical Reports

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  • December 1, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • May 20, 2016, 5:57 p.m.

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Banks, J.C.; Doyle, B.L.; Knapp, J.A.; Werho, D.; Gregory, R.B.; Anthony, M. et al. Using heavy ion backscattering spectrometry (HIBS) to solve integrated circuit manufacturing problems, article, December 1, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc690784/: accessed October 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.