GaN Device Processing

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Recent progress in the development of dry and wet etching techniques, implant doping and isolation, thermal processing, gate insulator technology and high reliability contacts is reviewed. Etch selectivities up to 10 for InN over AlN are possible in Inductively Coupled Plasmas using a Cl2/Ar chemistry, but in general selectivities for each binary nitride relative to each other are low ({lt} OR = 2) BECAUSE OF THE HIGH ION ENERGIES NEEDED TO INITIATE ETCHING. IMPROVED N-TYPE OHMIC CONTACT RESISTANCES ARE OBTAINED BY SELECTIVE AREA SI+ IMPLANTATION FOLLOWED BY VERY HIGH TEMPERATURE ({gt}1300 deg C) anneals in which the thermal budget is ... continued below

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14 p.

Creation Information

Pearton, S. J.; Ren, F.; Zolper, J. C. & Shul, R. J. January 1998.

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This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. It has been viewed 12 times . More information about this article can be viewed below.

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  • Pearton, S. J. University of Florida, Gainesville, FL (United States)
  • Ren, F. Bell Laboratories, Lucent Technologies, Murray Hill, NJ (United States)
  • Zolper, J. C. Office of Naval Research, Arlington, VA (United States)
  • Shul, R. J. Sandia National Labs., Albuquerque, NM (United States)

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Recent progress in the development of dry and wet etching techniques, implant doping and isolation, thermal processing, gate insulator technology and high reliability contacts is reviewed. Etch selectivities up to 10 for InN over AlN are possible in Inductively Coupled Plasmas using a Cl2/Ar chemistry, but in general selectivities for each binary nitride relative to each other are low ({lt} OR = 2) BECAUSE OF THE HIGH ION ENERGIES NEEDED TO INITIATE ETCHING. IMPROVED N-TYPE OHMIC CONTACT RESISTANCES ARE OBTAINED BY SELECTIVE AREA SI+ IMPLANTATION FOLLOWED BY VERY HIGH TEMPERATURE ({gt}1300 deg C) anneals in which the thermal budget is minimized and AlN encapsulation prevents GaN surface decomposition. Implant isolation is effective in GaN, AlGaN and AlInN, but marginal in InGaN. Candidate gate insulators for GaN include AlN, AlON and Ga(Gd)O(x), but interface state densities are still to high to realize state-of-the-art MIS devices.

Physical Description

14 p.

Notes

OSTI as DE98002578

Source

  • 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997

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  • Other: DE98002578
  • Report No.: SAND--98-0132C
  • Report No.: CONF-971201--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 622943
  • Archival Resource Key: ark:/67531/metadc690698

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • January 1998

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • May 5, 2016, 7:38 p.m.

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Pearton, S. J.; Ren, F.; Zolper, J. C. & Shul, R. J. GaN Device Processing, article, January 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc690698/: accessed November 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.