Atomic scale characterization of semiconductor interfaces by scanning transmission electron microscopy

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Recently, the scanning transmission electron microscope has become capable of forming electron probes of atomic dimensions. Through the technique of Z-contrast imaging, it is now possible to form atomic resolution images with high compositional sensitivity from which atomic column positions can be directly determined. An incoherent image of this nature also allows atomic resolution chemical analysis to be performed, by locating the probe over particular columns or planes seen in the image while electron energy loss spectra are collected. These powerful techniques, combined with atomic-scale calculations, constitute a powerful probe of the structural, kinetic and thermodynamic properties of complex materials. ... continued below

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8 p.

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Pennycook, S.J.; Chisholm, M.F.; Duscher, G.; Maiti, A. & Pantelides, S.T. May 1, 1997.

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Description

Recently, the scanning transmission electron microscope has become capable of forming electron probes of atomic dimensions. Through the technique of Z-contrast imaging, it is now possible to form atomic resolution images with high compositional sensitivity from which atomic column positions can be directly determined. An incoherent image of this nature also allows atomic resolution chemical analysis to be performed, by locating the probe over particular columns or planes seen in the image while electron energy loss spectra are collected. These powerful techniques, combined with atomic-scale calculations, constitute a powerful probe of the structural, kinetic and thermodynamic properties of complex materials. The authors show the direct observation of As segregated to specific sites in a Si grain boundary, and present a candidate model for the structure of the Si/SiO{sub 2} interface.

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8 p.

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OSTI as DE97007497

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  • International conference on materials and process characterization for VSLI, Shanghai (China), 4-7 Nov 1997

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  • Other: DE97007497
  • Report No.: CONF-971132--1
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 537365
  • Archival Resource Key: ark:/67531/metadc690628

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  • May 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • Jan. 21, 2016, 3:30 p.m.

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Pennycook, S.J.; Chisholm, M.F.; Duscher, G.; Maiti, A. & Pantelides, S.T. Atomic scale characterization of semiconductor interfaces by scanning transmission electron microscopy, article, May 1, 1997; Tennessee. (digital.library.unt.edu/ark:/67531/metadc690628/: accessed September 20, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.