Design and processing of various configurations of silicon pixel detectors for high irradiation tolerance up to 6 x 10{sup 14} n/cm{sup 2} in LHC application

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Various new configurations of silicon pixel detector have been designed and are in prototype production. The material selection and detector design are aimed to produce silicon detectors with radiation tolerance up to 6x10{sup 14} n/cm{sup 2} (or 4x10{sup 14} {pi}/cm{sup 2}) in LHC environment, which corresponds to a net increase (with long term anneal) of space charge of about 4.2x10{sup 13} cm{sup -3}. The configuration of n{sup +}/n/p{sup +}, with multi-guard-rings structure for high voltage (up to 300 volts) operation, has been used for the purpose to make the detector insensitive to space charge sign inversion. The material selection of ... continued below

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5 p.

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Chen, W.; Li, Z.; Chien, C.Y. & Xie, X. November 1, 1997.

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  • Chen, W.
  • Li, Z. Brookhaven National Lab., Upton, NY (United States)
  • Chien, C.Y.
  • Xie, X. Johns Hopkins Univ., Baltimore, MD (United States). Physics and Astronomy Dept.

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Various new configurations of silicon pixel detector have been designed and are in prototype production. The material selection and detector design are aimed to produce silicon detectors with radiation tolerance up to 6x10{sup 14} n/cm{sup 2} (or 4x10{sup 14} {pi}/cm{sup 2}) in LHC environment, which corresponds to a net increase (with long term anneal) of space charge of about 4.2x10{sup 13} cm{sup -3}. The configuration of n{sup +}/n/p{sup +}, with multi-guard-rings structure for high voltage (up to 300 volts) operation, has been used for the purpose to make the detector insensitive to space charge sign inversion. The material selection of medium resistivity (1.9k {Omega}-cm) n-type silicon has been made to try a new solution in extending detector lifetime: it should be the first step toward the use of low resistivity silicon, to prevent type inversion. The traditional configuration of p{sup +}/n/n{sup +}, with multi-guard-ring structure and n-type material, has also been used with the same layout, to get a comparison. It is shown as the fabrication of n{sup +}/n/p{sup +} pixel detectors requires eight mask steps, while just four mask steps are required for the p{sup +}/n/n{sup +} configuration.

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5 p.

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INIS; OSTI as DE98001636

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  • Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference, Albuquerque, NM (United States), 11-13 Nov 1997

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  • Other: DE98001636
  • Report No.: BNL--64979
  • Report No.: CONF-971147--
  • Grant Number: AC02-76CH00016
  • Office of Scientific & Technical Information Report Number: 562487
  • Archival Resource Key: ark:/67531/metadc689787

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  • November 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • Nov. 6, 2015, 11:39 p.m.

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Chen, W.; Li, Z.; Chien, C.Y. & Xie, X. Design and processing of various configurations of silicon pixel detectors for high irradiation tolerance up to 6 x 10{sup 14} n/cm{sup 2} in LHC application, article, November 1, 1997; Upton, New York. (digital.library.unt.edu/ark:/67531/metadc689787/: accessed December 16, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.