Spontaneous lateral composition modulation in InAlAs and InGaAs short-period superlattices

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The microstructure of spontaneous lateral composition modulation along the [110] direction has been studied in (InAs){sub n}/(AlAs){sub m} short-period superlattices grown by molecular beam epitaxy on (001) InP. X-ray diffraction and transmission electron microscopy show that global strain ({var_epsilon}) in the superlattice reduces the degree of composition modulation, which disappears for the absolute value of {var_epsilon} > 0.7%. For tensile strains of {var_epsilon} {approx} +0.4%, they find that In-rich columns become regularly spaced and correlated with cusps in the growth surface. A similar correlation is seen in (InAs){sub n}/(GaAs){sub m} short-period superlattices between the enriched columns and the peaks and ... continued below

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11 p.

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Follstaedt, D.M.; Twesten, R.D.; Millunchick, J.M.; Lee, S.R.; Jones, E.D.; Ahrenkiel, S.P. et al. July 11, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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The microstructure of spontaneous lateral composition modulation along the [110] direction has been studied in (InAs){sub n}/(AlAs){sub m} short-period superlattices grown by molecular beam epitaxy on (001) InP. X-ray diffraction and transmission electron microscopy show that global strain ({var_epsilon}) in the superlattice reduces the degree of composition modulation, which disappears for the absolute value of {var_epsilon} > 0.7%. For tensile strains of {var_epsilon} {approx} +0.4%, they find that In-rich columns become regularly spaced and correlated with cusps in the growth surface. A similar correlation is seen in (InAs){sub n}/(GaAs){sub m} short-period superlattices between the enriched columns and the peaks and valleys of {l_brace}114{r_brace}{sub A} facets on the surface. The enriched columns in the (InAs){sub n}/(GaAs){sub m} layer (and the facets) extend for much longer distances ({approximately}0.2--0.4 {micro}m) in the [1{bar 1}0] direction than do the columns in the (InAs){sub n}/(AlAs){sub m} layer ({approximately} 56 nm).

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11 p.

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OSTI as DE97007912

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  • 8. annual conference on modulated semiconductor structures, Santa Barbara, CA (United States), 14-18 Jul 1997

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  • Other: DE97007912
  • Report No.: SAND--97-0738C
  • Report No.: CONF-970782--3
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 515593
  • Archival Resource Key: ark:/67531/metadc689778

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  • July 11, 1997

Added to The UNT Digital Library

  • Aug. 14, 2015, 8:43 a.m.

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  • April 14, 2016, 8:46 p.m.

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Follstaedt, D.M.; Twesten, R.D.; Millunchick, J.M.; Lee, S.R.; Jones, E.D.; Ahrenkiel, S.P. et al. Spontaneous lateral composition modulation in InAlAs and InGaAs short-period superlattices, article, July 11, 1997; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc689778/: accessed October 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.