Rate limiting mechanism of transition metal gettering in multicrystalline silicon

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The authors have performed studies on multicrystalline silicon used for solar cells in the as-grown state and after a series of processing and gettering steps. The principal goal of this work is to determine the rate limiting step for metal impurity gettering from multicrystalline silicon with an emphasis on the release of impurities from structural defects. Synchrotron-based x-ray fluorescence mapping was used to monitor the release process. Copper and nickel impurities were found to reside primarily at dislocations in the as-grown state of the material. Short annealing treatments rapidly dissolved the impurity agglomerates. Based on these results and modeling of ... continued below

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9 p.

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McHugo, S.A.; Thompson, A.C.; Imaizumi, M.; Hieslmair, H. & Weberr, E.R. July 1, 1997.

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Description

The authors have performed studies on multicrystalline silicon used for solar cells in the as-grown state and after a series of processing and gettering steps. The principal goal of this work is to determine the rate limiting step for metal impurity gettering from multicrystalline silicon with an emphasis on the release of impurities from structural defects. Synchrotron-based x-ray fluorescence mapping was used to monitor the release process. Copper and nickel impurities were found to reside primarily at dislocations in the as-grown state of the material. Short annealing treatments rapidly dissolved the impurity agglomerates. Based on these results and modeling of the dissolution process, copper and nickel is in the form of small agglomerates (< 10 nm) clustered together over micron-scale regions in the as-grown material. Aluminum gettering further disintegrated the agglomerates to below the sensitivity of the system, 2--5 nm in radii. No significant barrier to release of copper or nickel from dislocations was observed.

Physical Description

9 p.

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OSTI as DE97054559

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  • 19. international confrence on defects in semiconductors, Aveiro (Portugal), 21-25 Jul 1997

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  • Other: DE97054559
  • Report No.: LBNL--40675
  • Report No.: CONF-970788--;LSBL--399
  • Grant Number: AC03-76SF00098
  • DOI: 10.2172/554829 | External Link
  • Office of Scientific & Technical Information Report Number: 554829
  • Archival Resource Key: ark:/67531/metadc689711

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  • July 1, 1997

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  • Aug. 14, 2015, 8:43 a.m.

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  • April 5, 2016, 1:35 p.m.

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McHugo, S.A.; Thompson, A.C.; Imaizumi, M.; Hieslmair, H. & Weberr, E.R. Rate limiting mechanism of transition metal gettering in multicrystalline silicon, report, July 1, 1997; California. (digital.library.unt.edu/ark:/67531/metadc689711/: accessed August 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.