Microdefects and self-interstitial diffusion in crystalline silicon

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In this thesis, a study is presented of D-defects and self-interstitial diffusion in silicon using Li ion (Li{sup +}) drifting in an electric field and transmission electron microscopy (TEM). Obstruction of Li{sup +} drifting has been found in wafers from certain but not all FZ p-type Si. Incomplete Li{sup +} drifting always occurs in the central region of the wafers. This work established that interstitial oxygen is not responsible for hindering Li{sup +} drifting. TEM was performed on a samples from the partially Li{sup +} drifted area and compared to regions without D-defects. Precipitates were found only in the region ... continued below

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221 p.

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Knowlton, W. B. May 1, 1998.

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Description

In this thesis, a study is presented of D-defects and self-interstitial diffusion in silicon using Li ion (Li{sup +}) drifting in an electric field and transmission electron microscopy (TEM). Obstruction of Li{sup +} drifting has been found in wafers from certain but not all FZ p-type Si. Incomplete Li{sup +} drifting always occurs in the central region of the wafers. This work established that interstitial oxygen is not responsible for hindering Li{sup +} drifting. TEM was performed on a samples from the partially Li{sup +} drifted area and compared to regions without D-defects. Precipitates were found only in the region containing D-defects that had partially Li{sup +} drifted. This result indicates D-defects are responsible for the precipitation that halts the Li{sup +} drift process. Nitrogen (N) doping has been shown to eliminate D-defects as measured by conventional techniques. Li{sup +} drifting and D-defects provide a useful means to study Si self-interstitial diffusion. The process modeling program SUPREM-IV was used to simulate the results of Si self-interstitial diffusion obtained from Li{sup +} drifting experiments. Anomalous results from the Si self-interstitial diffusion experiments forced a re-examination of the possibility of thermal dissociation of D-defects. Thermal annealing experiments that were performed support this possibility. A review of the current literature illustrates the need for more research on the effects of thermal processing on FZ Si to understand the dissolution kinetics of D-defects.

Physical Description

221 p.

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OSTI as DE98057491

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  • Other Information: DN: Thesis submitted to the Univ. of California, Berkeley, CA (US); TH: Thesis (Ph.D.)

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  • Other: DE98057491
  • Report No.: LBNL--41865
  • Grant Number: AC03-76SF00098
  • DOI: 10.2172/291041 | External Link
  • Office of Scientific & Technical Information Report Number: 291041
  • Archival Resource Key: ark:/67531/metadc689021

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  • May 1, 1998

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • Aug. 23, 2016, 3:39 p.m.

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Knowlton, W. B. Microdefects and self-interstitial diffusion in crystalline silicon, report, May 1, 1998; California. (digital.library.unt.edu/ark:/67531/metadc689021/: accessed January 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.