Direct observation of mobile protons in SiO{sub 2} thin films: Potential application in a novel memory device

PDF Version Also Available for Download.

Description

In this work we show that annealing of silicon/silicon-dioxide/silicon structures in forming gas (N{sub 2}:H{sub 2}; 95:5) above 500{degrees}C leads to spontaneous incorporation of mobile H{sup +} ions in the buried SiO{sub 2} layer. We demonstrate that, unlike the alkali ions feared as killer contaminants in the early days, the space charge distribution of these mobile protons within the buried oxide layer can be very well controlled and easily rearranged with relatively high speed at room temperature. The hysteresis in the flat band voltage shift provides a unique vehicle to study proton kinetics in silicon dioxide thin films. It is ... continued below

Physical Description

7 p.

Creation Information

Vanheusden, K.; Warren, W.L. & Fleetwood, D.M. December 31, 1996.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

In this work we show that annealing of silicon/silicon-dioxide/silicon structures in forming gas (N{sub 2}:H{sub 2}; 95:5) above 500{degrees}C leads to spontaneous incorporation of mobile H{sup +} ions in the buried SiO{sub 2} layer. We demonstrate that, unlike the alkali ions feared as killer contaminants in the early days, the space charge distribution of these mobile protons within the buried oxide layer can be very well controlled and easily rearranged with relatively high speed at room temperature. The hysteresis in the flat band voltage shift provides a unique vehicle to study proton kinetics in silicon dioxide thin films. It is further shown how this effect can be used as the basis for a reliable nonvolatile FET memory device that has potential to be competitive with state-of-the-art Si-based memory technologies. The power of this novel device is its simplicity; it requires few processing steps, all of which are standard in Si integrated-circuit fabrication.

Physical Description

7 p.

Notes

OSTI as DE97002463

Source

  • 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE97002463
  • Report No.: SAND--97-0062C
  • Report No.: CONF-961202--25
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 431162
  • Archival Resource Key: ark:/67531/metadc688882

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • December 31, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

Description Last Updated

  • May 5, 2016, 8:28 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 7

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Vanheusden, K.; Warren, W.L. & Fleetwood, D.M. Direct observation of mobile protons in SiO{sub 2} thin films: Potential application in a novel memory device, article, December 31, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc688882/: accessed November 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.