High performance transparent conducting films of cadmium indate prepared by RF sputtering

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The authors are examining various spinel-structured thin films (e.g., Cd{sub 2}SnO{sub 4}, Zn{sub 2}SnO{sub 4}) to develop higher-quality transparent conducting oxides (TCO) than more conventional materials such as indium tin oxide. Here, the authors report on cadmium indate (CdIn{sub 2}O{sub 4}, CIO), which is another member of this family. Thin films of CIO were deposited by radio-frequency (RF) magnetron sputtering, from an oxide target, onto borosilicate glass substrates. The variables included the substrate temperature, sputtering gas composition, and pressure. Film properties were measured before and after heat treatment. Characterization involved Hall effect measurements, optical and infrared spectrophotometry, X-ray diffraction, and ... continued below

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12 p.

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Coutts, T.J.; Wu, X. & Mulligan, W.P. April 1, 1996.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

The authors are examining various spinel-structured thin films (e.g., Cd{sub 2}SnO{sub 4}, Zn{sub 2}SnO{sub 4}) to develop higher-quality transparent conducting oxides (TCO) than more conventional materials such as indium tin oxide. Here, the authors report on cadmium indate (CdIn{sub 2}O{sub 4}, CIO), which is another member of this family. Thin films of CIO were deposited by radio-frequency (RF) magnetron sputtering, from an oxide target, onto borosilicate glass substrates. The variables included the substrate temperature, sputtering gas composition, and pressure. Film properties were measured before and after heat treatment. Characterization involved Hall effect measurements, optical and infrared spectrophotometry, X-ray diffraction, and atomic-force microscopy. Film resistivities as low as 2.3 {times} 10{sup {minus}4} {Omega} cm were achieved for a film thickness of 0.55 {micro}m. The transmittance was 90% in the visible region of the spectrum, without correction for substrate losses and without an anti-reflection coating. The plasma resonance occurred at longer wavelengths than for other materials and this, with a bandgap of approximately 3.1 eV, presents a wide window for optical transmittance. The highest mobility was 54 cm{sup 2} V{sup {minus}1} s{sup {minus}1} and the highest carrier concentration was 7.5 {times} 10{sup 20} cm{sup {minus}3}.

Physical Description

12 p.

Notes

OSTI as DE99000443

Source

  • Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 8-12 Apr 1996

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  • Other: DE99000443
  • Report No.: KAPL-P--000044
  • Report No.: CONF-960401--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/296769 | External Link
  • Office of Scientific & Technical Information Report Number: 296769
  • Archival Resource Key: ark:/67531/metadc688337

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  • April 1, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 6:26 p.m.

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Coutts, T.J.; Wu, X. & Mulligan, W.P. High performance transparent conducting films of cadmium indate prepared by RF sputtering, report, April 1, 1996; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc688337/: accessed December 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.