Cycling Endurance of SONOS Non-Volatile Memory Stacks Prepared with Nitrided SiO(2)/Si(100) Intefaces

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The effects of nitrided SiO{sub 2}/Si(100) interfaces upon cycling endurance in silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory transistors are investigated. Analysis of MOSFET sub-threshold characteristics indicate cycling degradation to be a manifestation of interface state (D{sub it}) generation at the tunnel oxide/silicon interface. After 10{sup 6} write/erase cycles, SONOS film stacks prepared with nitrided tunnel oxides exhibit enhanced cycling endurance with {Delta}D{sub it}=3x10{sup 12} V{sup -1}cm{sup -2}, compared to {Delta}D{sub it}=2x10{sup 13} V{sup -l}cm{sup -2} for non-nitrided tunnel oxides. Additionally, if the capping oxide is formed by steam oxidation, rather than by deposition, SONOS stacks prepared with non-nitrided tunnel oxides exhibit endurance ... continued below

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Habermehl, S.; Nasby, R.D. & Rightley, M.J. January 11, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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The effects of nitrided SiO{sub 2}/Si(100) interfaces upon cycling endurance in silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory transistors are investigated. Analysis of MOSFET sub-threshold characteristics indicate cycling degradation to be a manifestation of interface state (D{sub it}) generation at the tunnel oxide/silicon interface. After 10{sup 6} write/erase cycles, SONOS film stacks prepared with nitrided tunnel oxides exhibit enhanced cycling endurance with {Delta}D{sub it}=3x10{sup 12} V{sup -1}cm{sup -2}, compared to {Delta}D{sub it}=2x10{sup 13} V{sup -l}cm{sup -2} for non-nitrided tunnel oxides. Additionally, if the capping oxide is formed by steam oxidation, rather than by deposition, SONOS stacks prepared with non-nitrided tunnel oxides exhibit endurance characteristics similar to stacks with nitrided tunnel oxides. From this observation it is concluded that latent nitridation of the tunnel oxidehilicon interface occurs during steam oxide cap formation.

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  • Journal Name: Electron Device Letters

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  • Other: DE00003208
  • Report No.: SAND99-0081J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 3208
  • Archival Resource Key: ark:/67531/metadc688335

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  • January 11, 1999

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  • July 25, 2015, 2:20 a.m.

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  • Nov. 23, 2016, 12:17 p.m.

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Habermehl, S.; Nasby, R.D. & Rightley, M.J. Cycling Endurance of SONOS Non-Volatile Memory Stacks Prepared with Nitrided SiO(2)/Si(100) Intefaces, article, January 11, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc688335/: accessed December 11, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.