MOSFET solid state switching circuit improves the 0 to 99% rise time for framing camera deflection electronics

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We have improved the 0 to 99% rise time voltage on our 2 frame deflection plates from 160 to 65 nS with the addition of a peaking circuit that works in conjunction with our primary 2 frame deflection circuitry. Our peaking technique has applications to other HV pulsers including those which must drive 51 ohm loads. Generally, rise time voltages are measured between 10 and 90%. To minimize the camera image blur resulting from the dynamic influence of deflection plate potentials acting on photocathode electrons, it was necessary to design a circuit that would rise from 0 to the 99% ... continued below

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6 p.

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Rivera, A.T. & Thomas, S. September 1, 1996.

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Description

We have improved the 0 to 99% rise time voltage on our 2 frame deflection plates from 160 to 65 nS with the addition of a peaking circuit that works in conjunction with our primary 2 frame deflection circuitry. Our peaking technique has applications to other HV pulsers including those which must drive 51 ohm loads. Generally, rise time voltages are measured between 10 and 90%. To minimize the camera image blur resulting from the dynamic influence of deflection plate potentials acting on photocathode electrons, it was necessary to design a circuit that would rise from 0 to the 99% voltage level in under 100nS. Once this voltage was reached, it was necessary to stay within 1% of the attained voltage level for a duration of 1 uS. This was accomplished with the use of MOSFET solid state switching.

Physical Description

6 p.

Notes

OSTI as DE97050760

Source

  • 22. international congress on high speed photography and photonics, Santa Fe, NM (United States), 28 Oct 1996

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  • Other: DE97050760
  • Report No.: UCRL-JC--123905
  • Report No.: CONF-9610181--8
  • Grant Number: W-7405-ENG-48
  • Office of Scientific & Technical Information Report Number: 428706
  • Archival Resource Key: ark:/67531/metadc688317

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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  • September 1, 1996

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  • July 25, 2015, 2:20 a.m.

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  • Feb. 19, 2016, 12:19 p.m.

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Rivera, A.T. & Thomas, S. MOSFET solid state switching circuit improves the 0 to 99% rise time for framing camera deflection electronics, article, September 1, 1996; California. (digital.library.unt.edu/ark:/67531/metadc688317/: accessed December 13, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.