Mechanisms of heavy-ion induced gate rupture in thin oxides

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Single event gate rupture (SEGR) is a catastrophic failure mode that occurs in dielectric materials that are struck by energetic heavy ions while biased under a high electric field condition. SEGR can reduce the critical electric field to breakdown to less than half the value observed in normal voltage ramp reliability tests. As electric fields in gate oxides increase to greater than 5 MV/cm in advanced MOS technologies, the impact of SEGR on the reliability of space based electronics must be assessed. In this summary, the authors explore the nature of SEGR in oxides with thickness from 7 nm to ... continued below

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2 p.

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Sexton, F.W.; Fleetwood, D.M. & Krisch, K.S. August 1, 1998.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Single event gate rupture (SEGR) is a catastrophic failure mode that occurs in dielectric materials that are struck by energetic heavy ions while biased under a high electric field condition. SEGR can reduce the critical electric field to breakdown to less than half the value observed in normal voltage ramp reliability tests. As electric fields in gate oxides increase to greater than 5 MV/cm in advanced MOS technologies, the impact of SEGR on the reliability of space based electronics must be assessed. In this summary, the authors explore the nature of SEGR in oxides with thickness from 7 nm to less than 5 nm, where soft breakdown is often observed during traditional reliability tests. They discuss the possible connection between the present understanding of SEGR and voltage stress breakdown models.

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2 p.

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INIS; OSTI as DE98006158

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  • 29. IEEE semiconductor interface specialists conference, San Diego, CA (United States), 3-5 Dec 1998

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  • Other: DE98006158
  • Report No.: SAND--98-1899C
  • Report No.: CONF-981206--
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 304162
  • Archival Resource Key: ark:/67531/metadc688306

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • August 1, 1998

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  • July 25, 2015, 2:20 a.m.

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  • May 5, 2016, 8:08 p.m.

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Sexton, F.W.; Fleetwood, D.M. & Krisch, K.S. Mechanisms of heavy-ion induced gate rupture in thin oxides, article, August 1, 1998; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc688306/: accessed October 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.