Sub-surface characterization and three dimensional profiling of semiconductors by magnetic resonance force microscopy

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Description

This is the final report of a two-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project successfully developed a magnetic resonance force microscope (MRFM) instrument to mechanically detect magnetic resonance signals. This technique provides an intrinsically subsurface, chemical-species-specific probe of structure, constituent density and other properties of materials. As in conventional magnetic resonance imaging (MRI), an applied magnetic field gradient selects a well defined volume of the sample for study. However mechanical detection allows much greater sensitivity, and this in turn allows the reduction of the size of the minimum resolvable volume. This ... continued below

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10 p.

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Hammel, P.C.; Moore, G.; Roukes, M. & Zhang, Zhenyong October 1, 1996.

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Description

This is the final report of a two-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). The project successfully developed a magnetic resonance force microscope (MRFM) instrument to mechanically detect magnetic resonance signals. This technique provides an intrinsically subsurface, chemical-species-specific probe of structure, constituent density and other properties of materials. As in conventional magnetic resonance imaging (MRI), an applied magnetic field gradient selects a well defined volume of the sample for study. However mechanical detection allows much greater sensitivity, and this in turn allows the reduction of the size of the minimum resolvable volume. This requires building an instrument designed to achieve nanometer-scale resolution at buried semiconductor interfaces. High-resolution, three-dimensional depth profiling of semiconductors is critical in the development and fabrication of semiconductor devices. Currently, there is no capability for direct, high-resolution observation and characterization of dopant density, and other critical features of semiconductors. The successful development of MRFM in conjunction with modifications to improve resolution will enable for the first time detailed structural and electronic studies in doped semiconductors and multilayered nanoelectronic devices, greatly accelerating the current pace of research and development.

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10 p.

Notes

OSTI as DE97000288

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  • Other Information: PBD: [1996]

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  • Other: DE97000288
  • Report No.: LA-UR--96-3253
  • Grant Number: W-7405-ENG-36
  • DOI: 10.2172/380356 | External Link
  • Office of Scientific & Technical Information Report Number: 380356
  • Archival Resource Key: ark:/67531/metadc688254

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  • October 1, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • Feb. 26, 2016, 6:30 p.m.

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Hammel, P.C.; Moore, G.; Roukes, M. & Zhang, Zhenyong. Sub-surface characterization and three dimensional profiling of semiconductors by magnetic resonance force microscopy, report, October 1, 1996; New Mexico. (digital.library.unt.edu/ark:/67531/metadc688254/: accessed September 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.