GaInAsSb materials for thermophotovoltaics

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Ga{sub 1{minus}x}In{sub x}As{sub 1{minus}y}Sb{sub y} (0.06 < x < 0.2, 0.05 < y < 0.18) epilayers were grown lattice-matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). For lattice-matched alloys, mirror-like surface morphologies were obtained by both OMVPE and MBE. The 4K photoluminescence (PL) of all layers had a full-width at half-maximum (FWHM) of less than 10 meV for PL peak emission < 1.9 {micro}m. PL FWHM increased to 30 meV for peak emission {approximately}2.12 {micro}m for OMVPE-grown layers. Nominally undoped layers are p-type with typical 300 K hole concentration of {approximately}9 {times} 10{sup ... continued below

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17 p.

Creation Information

Wang, C.A.; Turner, G.W.; Manfra, M.J.; Choi, H.K. & Spears, D.L. December 1, 1996.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

Ga{sub 1{minus}x}In{sub x}As{sub 1{minus}y}Sb{sub y} (0.06 < x < 0.2, 0.05 < y < 0.18) epilayers were grown lattice-matched to GaSb substrates by organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). For lattice-matched alloys, mirror-like surface morphologies were obtained by both OMVPE and MBE. The 4K photoluminescence (PL) of all layers had a full-width at half-maximum (FWHM) of less than 10 meV for PL peak emission < 1.9 {micro}m. PL FWHM increased to 30 meV for peak emission {approximately}2.12 {micro}m for OMVPE-grown layers. Nominally undoped layers are p-type with typical 300 K hole concentration of {approximately}9 {times} 10{sup 15} cm{sup {minus}3} and hole mobility {approximately}450 to 580 cm{sup 2}/V-s for OMVPE-grown layers, p- and n-type doping is reported for layers grown with either technique. The ideality factor of diode structures is {approximately}2 for both techniques.

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17 p.

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OSTI as DE99002674

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  • 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996

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  • Other: DE99002674
  • Report No.: KAPL-P--000238
  • Report No.: K--96154;CONF-961202--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/350930 | External Link
  • Office of Scientific & Technical Information Report Number: 350930
  • Archival Resource Key: ark:/67531/metadc687982

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  • December 1, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 18, 2016, 2:37 p.m.

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Wang, C.A.; Turner, G.W.; Manfra, M.J.; Choi, H.K. & Spears, D.L. GaInAsSb materials for thermophotovoltaics, report, December 1, 1996; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc687982/: accessed September 25, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.