Automation, Control and Modeling of Compound Semiconductor Thin-Film Growth

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This report documents the results of a laboratory-directed research and development (LDRD) project on control and agile manufacturing in the critical metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) materials growth processes essential to high-speed microelectronics and optoelectronic components. This effort is founded on a modular and configurable process automation system that serves as a backbone allowing integration of process-specific models and sensors. We have developed and integrated MOCVD- and MBE-specific models in this system, and demonstrated the effectiveness of sensor-based feedback control in improving the accuracy and reproducibility of semiconductor heterostructures. In addition, within this framework we ... continued below

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Breiland, W.G.; Coltrin, M.E.; Drummond, T.J.; Horn, K.M.; Hou, H.Q.; Klem, J.F. et al. February 1, 1999.

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This report is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this report can be viewed below.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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Description

This report documents the results of a laboratory-directed research and development (LDRD) project on control and agile manufacturing in the critical metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) materials growth processes essential to high-speed microelectronics and optoelectronic components. This effort is founded on a modular and configurable process automation system that serves as a backbone allowing integration of process-specific models and sensors. We have developed and integrated MOCVD- and MBE-specific models in this system, and demonstrated the effectiveness of sensor-based feedback control in improving the accuracy and reproducibility of semiconductor heterostructures. In addition, within this framework we have constructed ''virtual reactor'' models for growth processes, with the goal of greatly shortening the epitaxial growth process development cycle.

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Medium: P; Size: vp.

Notes

OSTI as DE00003559

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  • Other Information: PBD: 1 Feb 1999

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  • Report No.: SAND99-0111
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/3559 | External Link
  • Office of Scientific & Technical Information Report Number: 3559
  • Archival Resource Key: ark:/67531/metadc687755

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Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

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Creation Date

  • February 1, 1999

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

Description Last Updated

  • April 11, 2016, 1:44 p.m.

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Breiland, W.G.; Coltrin, M.E.; Drummond, T.J.; Horn, K.M.; Hou, H.Q.; Klem, J.F. et al. Automation, Control and Modeling of Compound Semiconductor Thin-Film Growth, report, February 1, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc687755/: accessed December 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.