Anodically enhanced diffusion in Cu/Ag thin film couples

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Thin, 100-nm films of first silver and then copper were deposited consecutively onto pure single-crystal (111) silicon substrates by magneton sputter deposition. Controlled anodic current density was applied at room temperature to dissolve the outer copper film to varying depths approaching the copper/silver interface. Profiles of copper and silver concentration vs. depth below the anodically dissolved surfaces were subsequently obtained by argon ion sputtering and simultaneous Auger Electron Spectroscopy. Despite some intrinsic mixing during the profile analysis, there is clear evidence that diffusion of copper and silver into one another is enhanced by anodic currents at the outer copper surface. ... continued below

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13 p.

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Jones, D.A. & Jankowski, A.F. April 1, 1995.

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  • Jones, D.A. Univ. of Nevada, Reno, NV (United States). Chemical and Metallurgical Engineering
  • Jankowski, A.F. Lawrence Livermore National Lab., CA (United States)

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Description

Thin, 100-nm films of first silver and then copper were deposited consecutively onto pure single-crystal (111) silicon substrates by magneton sputter deposition. Controlled anodic current density was applied at room temperature to dissolve the outer copper film to varying depths approaching the copper/silver interface. Profiles of copper and silver concentration vs. depth below the anodically dissolved surfaces were subsequently obtained by argon ion sputtering and simultaneous Auger Electron Spectroscopy. Despite some intrinsic mixing during the profile analysis, there is clear evidence that diffusion of copper and silver into one another is enhanced by anodic currents at the outer copper surface. Preliminary interpretation leads the authors to believe that the effect is caused by surface formation of vacancies during anodic dissolution. The anodically generated vacancies can migrate as divacancies to the copper/silver interface where they enhance diffusion by the usual vacancy exchange mechanism.

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13 p.

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INIS; OSTI as DE95009198

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  • Alloy 600 experts meeting, Warrenton, VA (United States), 5-9 Apr 1993

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  • Other: DE95009198
  • Report No.: CONF-9304146--4
  • Grant Number: FC08-90NV10891
  • Office of Scientific & Technical Information Report Number: 42449
  • Archival Resource Key: ark:/67531/metadc687714

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Office of Scientific & Technical Information Technical Reports

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  • April 1, 1995

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  • July 25, 2015, 2:20 a.m.

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  • Nov. 18, 2015, 6 p.m.

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Jones, D.A. & Jankowski, A.F. Anodically enhanced diffusion in Cu/Ag thin film couples, article, April 1, 1995; United States. (digital.library.unt.edu/ark:/67531/metadc687714/: accessed November 22, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.