Effect of Low Temperature Ion Irradiation on the Microstructure of Nitride Ceramics

PDF Version Also Available for Download.

Description

Cross-section transmission electron microscopy was used to investigate the microstructure of polycrystalline silicon nitride (Si{sub 3}N{sub 4}) and aluminum nitride (AlN) following 2 MeV Si ion irradiation at 80 and 400 K up to a fluence of 4 x 10{sup 20} ions/m{sup 2} (maximum damage of {approximately}10 displacements per atom, dpa). A buried amorphous band was observed at both temperatures in Si{sub 3}N{sub 4} in the region corresponding to the peaks in the implanted ion and displacement damage. From a comparison of Si{sub 3}N{sub 4} specimens irradiated at different fluences, it is concluded that the amorphization is primarily controlled by ... continued below

Physical Description

6 p.

Creation Information

Eatherly, W.S.; Hensley, D.K.; Jones, J.W.; Snead, L.L. & Zinkle, S.J. November 30, 1998.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Sponsor

Publisher

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

Cross-section transmission electron microscopy was used to investigate the microstructure of polycrystalline silicon nitride (Si{sub 3}N{sub 4}) and aluminum nitride (AlN) following 2 MeV Si ion irradiation at 80 and 400 K up to a fluence of 4 x 10{sup 20} ions/m{sup 2} (maximum damage of {approximately}10 displacements per atom, dpa). A buried amorphous band was observed at both temperatures in Si{sub 3}N{sub 4} in the region corresponding to the peaks in the implanted ion and displacement damage. From a comparison of Si{sub 3}N{sub 4} specimens irradiated at different fluences, it is concluded that the amorphization is primarily controlled by the implanted Si concentration rather than the displacement damage level. Si{sub 3}N{sub 4} amorphization did not occur in regions well-separated from the implanted ions for doses up to at least 3 dpa at 80 K, whereas amorphization occurred in the ion implanted region (calculated Si concentration >0.01 at.%) for damage levels as low as {approximately}0.6 dpa. The volumetric swelling associated with the amorphization of Si{sub 3}N{sub 4} is < 10%. Amorphization was not observed in any of the irradiated AIN specimens. A moderate density of small ({approximately}3 nm) defect clusters were observed in the crystalline damaged regions of both the Si{sub 3}N{sub 4} and AIN specimens at both irradiation temperatures. Aligned network dislocations were also observed in the AIN specimen irradiated to high dose at 80 K.

Physical Description

6 p.

Notes

OSTI as DE00003460

Medium: P; Size: 6 pages

Source

  • Fall Meeting of the Materials Research Society, Boston, MA (US), 11/30/1998--12/04/1998

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Report No.: ORNL/CP-101221
  • Report No.: AT 60 20 00 0
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 3460
  • Archival Resource Key: ark:/67531/metadc687627

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • November 30, 1998

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

Description Last Updated

  • April 11, 2017, 12:59 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 3

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Eatherly, W.S.; Hensley, D.K.; Jones, J.W.; Snead, L.L. & Zinkle, S.J. Effect of Low Temperature Ion Irradiation on the Microstructure of Nitride Ceramics, article, November 30, 1998; Tennessee. (digital.library.unt.edu/ark:/67531/metadc687627/: accessed September 25, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.