Effects of ion implantation and temperature on radiation-induced segregation in Ni-9Al alloys

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Effects of Ne and Sc implantation on radiation-induced segregation (RIS) in Ni-9at.%Al were studied in-situ using the high-voltage electron microscope/Tandem accelerator at ANL. A highly-focused 900- keV electron beam generated radial defect fluxes which, in turn, induced transport of Al atoms toward the center of the electron- irradiated area via the inverse Kirkendall effect. Radial segregation rate of Al atoms was monitored by measuring the diameter of the {gamma}{prime}-Ni{sub 3}Al zone which formed in the Al-enriched area during irradiation. Ne and Sc implantation effects on RIS were investigated at 550 C; Ne effects were also examined at 625 C to ... continued below

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6 p.

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Giacobbe, M.J.; Lam, N.Q.; Okamoto, P.R.; Zaluzec, N.J. & Stubbins, J.F. December 1, 1996.

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Effects of Ne and Sc implantation on radiation-induced segregation (RIS) in Ni-9at.%Al were studied in-situ using the high-voltage electron microscope/Tandem accelerator at ANL. A highly-focused 900- keV electron beam generated radial defect fluxes which, in turn, induced transport of Al atoms toward the center of the electron- irradiated area via the inverse Kirkendall effect. Radial segregation rate of Al atoms was monitored by measuring the diameter of the {gamma}{prime}-Ni{sub 3}Al zone which formed in the Al-enriched area during irradiation. Ne and Sc implantation effects on RIS were investigated at 550 C; Ne effects were also examined at 625 C to determine effect of temperature on ability of Ne to act as defect trapping sites, causing RIS suppression. It was found that the RIS suppression effect of Ne increased with irradiation temperature and that Sc had a small RIS suppression effect which increased with Sc implantation dose. Ne bubbles which formed during implantation are believed to be responsible for its strong suppression effect. 6 figs, 12 refs

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6 p.

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INIS; OSTI as DE97003163

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  • 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996

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  • Other: DE97003163
  • Report No.: ANL/MSD/CP--90421
  • Report No.: CONF-961202--81
  • Grant Number: W-31109-ENG-38
  • Office of Scientific & Technical Information Report Number: 461154
  • Archival Resource Key: ark:/67531/metadc687212

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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  • December 1, 1996

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  • July 25, 2015, 2:21 a.m.

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  • Dec. 14, 2015, 6:49 p.m.

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Giacobbe, M.J.; Lam, N.Q.; Okamoto, P.R.; Zaluzec, N.J. & Stubbins, J.F. Effects of ion implantation and temperature on radiation-induced segregation in Ni-9Al alloys, article, December 1, 1996; Illinois. (digital.library.unt.edu/ark:/67531/metadc687212/: accessed April 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.