Effect of stoichiometry on defect distribution in cubic GaN grown on GaAs by plasma-assisted MBE

PDF Version Also Available for Download.

Description

High resolution electron microscopy was used to study the structure of {beta}-GaN epilayers grown on (001) GaAs substrates by plasma- assisted molecular-beam-epitaxy. The rf plasma source was used to promote chemically active nitrogen. The layer quality was shown to depend on growth conditions (Ga flux and N{sub 2} flow for fixed rf power). The best quality of GaN layers was achieved by ``stoichiometric`` growth; Ga-rich layers contain a certain amount of the wurtzite phase. GaN layers contain a high density of stacking faults which drastically decreases toward the GaN surface. Stacking faults are anisotropically distributed in the GaN layer; the ... continued below

Physical Description

6 p.

Creation Information

Ruvimov, S.; Liliental-Weber, Z.; Washburn, J.; Drummond, T.J.; Hafish, M. & Lee, S.R. December 31, 1996.

Context

This article is part of the collection entitled: Office of Scientific & Technical Information Technical Reports and was provided by UNT Libraries Government Documents Department to Digital Library, a digital repository hosted by the UNT Libraries. More information about this article can be viewed below.

Who

People and organizations associated with either the creation of this article or its content.

Authors

Sponsor

Publisher

  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

Provided By

UNT Libraries Government Documents Department

Serving as both a federal and a state depository library, the UNT Libraries Government Documents Department maintains millions of items in a variety of formats. The department is a member of the FDLP Content Partnerships Program and an Affiliated Archive of the National Archives.

Contact Us

What

Descriptive information to help identify this article. Follow the links below to find similar items on the Digital Library.

Description

High resolution electron microscopy was used to study the structure of {beta}-GaN epilayers grown on (001) GaAs substrates by plasma- assisted molecular-beam-epitaxy. The rf plasma source was used to promote chemically active nitrogen. The layer quality was shown to depend on growth conditions (Ga flux and N{sub 2} flow for fixed rf power). The best quality of GaN layers was achieved by ``stoichiometric`` growth; Ga-rich layers contain a certain amount of the wurtzite phase. GaN layers contain a high density of stacking faults which drastically decreases toward the GaN surface. Stacking faults are anisotropically distributed in the GaN layer; the majority intersect the interface along lines parallel to the ``major flat`` of the GaAs substrate. This correlates well with the observed anisotropy in the intensity distribution of x-ray reflexions. Formation of stacking faults are often associated with atomic steps at the GaN- GaAs interfaces.

Physical Description

6 p.

Notes

OSTI as DE97004371

Source

  • 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996

Language

Item Type

Identifier

Unique identifying numbers for this article in the Digital Library or other systems.

  • Other: DE97004371
  • Report No.: SAND--96-2037C
  • Report No.: CONF-961202--89
  • Grant Number: AC04-94AL85000;AC03-76SF00098
  • Office of Scientific & Technical Information Report Number: 459985
  • Archival Resource Key: ark:/67531/metadc687059

Collections

This article is part of the following collection of related materials.

Office of Scientific & Technical Information Technical Reports

Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

Office of Scientific and Technical Information (OSTI) is the Department of Energy (DOE) office that collects, preserves, and disseminates DOE-sponsored research and development (R&D) results that are the outcomes of R&D projects or other funded activities at DOE labs and facilities nationwide and grantees at universities and other institutions.

What responsibilities do I have when using this article?

When

Dates and time periods associated with this article.

Creation Date

  • December 31, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:21 a.m.

Description Last Updated

  • April 13, 2016, 1:37 p.m.

Usage Statistics

When was this article last used?

Yesterday: 0
Past 30 days: 0
Total Uses: 7

Interact With This Article

Here are some suggestions for what to do next.

Start Reading

PDF Version Also Available for Download.

Citations, Rights, Re-Use

Ruvimov, S.; Liliental-Weber, Z.; Washburn, J.; Drummond, T.J.; Hafish, M. & Lee, S.R. Effect of stoichiometry on defect distribution in cubic GaN grown on GaAs by plasma-assisted MBE, article, December 31, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc687059/: accessed November 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.