Limiting phase separation in epitaxial GaInAsSb

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GaInAsSb alloys are of great interest for lattice-matched thermophotovoltaic (TPV) devices because of the high performance attainable at 2.2 {micro}m. Extension of the TPV device cutoff wavelength to beyond 2.2 {micro}m is especially desirable since the emissive power of the source is significant at these longer wavelengths. However, the GaInAsSb quaternary alloy system exhibits a miscibility gap in the wavelength range of interest, and no devices with cutoff wavelengths longer than 2.3 {micro}m have been demonstrated. This paper reports the successful growth of GaInAsSb alloys which exhibit room temperature photoluminescence (PL) at wavelengths as long as 2.5 {micro}m. TPV devices ... continued below

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22 p.

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Wang, C.A.; Ransom, S.L.; Oakley, D.C.; Choi, H.K. & Charache, G.W. November 1, 1998.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

GaInAsSb alloys are of great interest for lattice-matched thermophotovoltaic (TPV) devices because of the high performance attainable at 2.2 {micro}m. Extension of the TPV device cutoff wavelength to beyond 2.2 {micro}m is especially desirable since the emissive power of the source is significant at these longer wavelengths. However, the GaInAsSb quaternary alloy system exhibits a miscibility gap in the wavelength range of interest, and no devices with cutoff wavelengths longer than 2.3 {micro}m have been demonstrated. This paper reports the successful growth of GaInAsSb alloys which exhibit room temperature photoluminescence (PL) at wavelengths as long as 2.5 {micro}m. TPV devices with cutoff wavelengths out to 2.5 {micro}m exhibit external quantum efficiencies of 57%. These values are comparable to those measured for 2.2 {micro}m devices.

Physical Description

22 p.

Notes

OSTI as DE99001733

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  • Fall meeting of the Materials Research Society, Boston, MA (United States), 30 Nov - 4 Dec 1998

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  • Other: DE99001733
  • Report No.: KAPL-P--000133
  • Report No.: K--98189;CONF-981104--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/314152 | External Link
  • Office of Scientific & Technical Information Report Number: 314152
  • Archival Resource Key: ark:/67531/metadc686615

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  • November 1, 1998

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 18, 2016, 2:44 p.m.

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Wang, C.A.; Ransom, S.L.; Oakley, D.C.; Choi, H.K. & Charache, G.W. Limiting phase separation in epitaxial GaInAsSb, report, November 1, 1998; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc686615/: accessed October 17, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.