Modeling high-density-plasma deposition of SiO{sub 2} in SiH{sub 4}/O{sub 2}/Ar

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The authors have compiled sets of gas-phase and surface reactions for use in modeling plasma-enhanced chemical vapor deposition of silicon dioxide from silane, oxygen and argon gas mixtures in high-density-plasma reactors. They have applied the reaction mechanisms to modeling three different kinds of high-density plasma deposition chambers, and tested them by comparing model predictions to a variety of experimental measurements. The model simulates a well mixed reactor by solving global conservation equations averaged across the reactor volume. The gas-phase reaction mechanism builds from fundamental electron-impact cross section data available in the literature, and also includes neutral-molecule, ion-ion, and ion-molecule reaction ... continued below

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52 p.

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Meeks, E.; Larson, R.S.; Ho, P.; Apblett, C.; Han, S.M.; Edelberg, E. et al. March 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Livermore, CA (United States)
    Place of Publication: Livermore, California

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Description

The authors have compiled sets of gas-phase and surface reactions for use in modeling plasma-enhanced chemical vapor deposition of silicon dioxide from silane, oxygen and argon gas mixtures in high-density-plasma reactors. They have applied the reaction mechanisms to modeling three different kinds of high-density plasma deposition chambers, and tested them by comparing model predictions to a variety of experimental measurements. The model simulates a well mixed reactor by solving global conservation equations averaged across the reactor volume. The gas-phase reaction mechanism builds from fundamental electron-impact cross section data available in the literature, and also includes neutral-molecule, ion-ion, and ion-molecule reaction paths. The surface reaction mechanism is based on insight from attenuated total-reflection Fourier-transform infrared spectroscopy experiments. This mechanism describes the adsorption of radical species on an oxide surface, ion-enhanced reactions leading to species desorption from the surface layer, radical abstractions competing for surface sites, and direct energy-dependent ion sputtering of the oxide material. Experimental measurements of total ion densities, relative radical densities as functions of plasma operating conditions, and net deposition-rate have been compared to model predictions to test and modify the chemical kinetics mechanisms. Results show good quantitative agreement between model predictions and experimental measurements.

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52 p.

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OSTI as DE97007010

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  • Other Information: PBD: Mar 1997

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  • Other: DE97007010
  • Report No.: SAND--97-8241
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/495824 | External Link
  • Office of Scientific & Technical Information Report Number: 495824
  • Archival Resource Key: ark:/67531/metadc686518

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  • March 1, 1997

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  • July 25, 2015, 2:21 a.m.

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  • April 12, 2016, 8:19 p.m.

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Meeks, E.; Larson, R.S.; Ho, P.; Apblett, C.; Han, S.M.; Edelberg, E. et al. Modeling high-density-plasma deposition of SiO{sub 2} in SiH{sub 4}/O{sub 2}/Ar, report, March 1, 1997; Livermore, California. (digital.library.unt.edu/ark:/67531/metadc686518/: accessed September 22, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.