The linewidth enhancement factor in single quantum-well GRINSCH semiconductor lasers is investigated theoretically and experimentally. For thin wells a small linewidth enhancement factor is obtained which clamps with increasing carrier density, in contrast to the monotonous increase observed for thicker wells. Microscopic many-body calculations reproduce the experimental observations attributing the clamping to a subtle interplay between excitation dependent gain shifts and carrier population distributions.
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Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
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Albuquerque, New Mexico
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The linewidth enhancement factor in single quantum-well GRINSCH semiconductor lasers is investigated theoretically and experimentally. For thin wells a small linewidth enhancement factor is obtained which clamps with increasing carrier density, in contrast to the monotonous increase observed for thicker wells. Microscopic many-body calculations reproduce the experimental observations attributing the clamping to a subtle interplay between excitation dependent gain shifts and carrier population distributions.
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Bossert, D.; Chow, W.W.; Hader, J.; Koch, S.W.; Moloney, J.V. & Stohls, J.Clamping of the Linewidth Enhancement Factor in Narrow Quantum-Well GRINSCH Semiconductor Lasers,
article,
January 20, 1999;
Albuquerque, New Mexico.
(digital.library.unt.edu/ark:/67531/metadc686228/:
accessed April 19, 2018),
University of North Texas Libraries, Digital Library, digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.