High-frequency operation of 0.3 {mu}m GaAs JFETs for low-power electronic

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GaAs Junction Field Effect Transistors (JFETs) have attracted renewed attention for low-power, low-voltage electronics. JFETs have a significant advantage over MESFETs for low-power operation due to their higher gate barrier to current flow resulting from p/n junction gate. This paper reports recent advances in an all ion implanted self-aligned GaAs JFET with a gate length down to 0.3 {mu}m. By employing shallopw SiF implants next to the gate, dielectric sidewall spacers, and 50 keV source and drain implants, JFETs with a f{sub t} up to 49 GHz with good pinchoff and subthreshold characteristics have been realized. In addition, the JFET ... continued below

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6 p.

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Zolper, J.C.; Baca, A.G.; Hietala, V.M.; Shul, R.J. & Sherwin, M.E. September 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

GaAs Junction Field Effect Transistors (JFETs) have attracted renewed attention for low-power, low-voltage electronics. JFETs have a significant advantage over MESFETs for low-power operation due to their higher gate barrier to current flow resulting from p/n junction gate. This paper reports recent advances in an all ion implanted self-aligned GaAs JFET with a gate length down to 0.3 {mu}m. By employing shallopw SiF implants next to the gate, dielectric sidewall spacers, and 50 keV source and drain implants, JFETs with a f{sub t} up to 49 GHz with good pinchoff and subthreshold characteristics have been realized. In addition, the JFET benefits from the use of shallow Zn or Cd implantation to form abrupt p{sup +}/n gate profiles.

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6 p.

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OSTI as DE96014833

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  • 190. meeting of the Electrochemical Society and technical exhibition, San Antonio, TX (United States), 6-11 Oct 1996

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  • Other: DE96014833
  • Report No.: SAND--96-2005C
  • Report No.: CONF-961040--3
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 377622
  • Archival Resource Key: ark:/67531/metadc686211

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Office of Scientific & Technical Information Technical Reports

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  • September 1, 1996

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  • July 25, 2015, 2:20 a.m.

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  • April 13, 2016, 2:08 p.m.

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Zolper, J.C.; Baca, A.G.; Hietala, V.M.; Shul, R.J. & Sherwin, M.E. High-frequency operation of 0.3 {mu}m GaAs JFETs for low-power electronic, article, September 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc686211/: accessed December 16, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.