0.5 μm E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant

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A doped-channel heterostructure field effect transistor (H-FET) technology has been developed with self-aligned refractory gate processing and using both enhancement- and depletion-mode transistors. D-HFET devices are obtained with a threshold voltage adjust implant into material designed for E-HFET operation. Both E- and D-HFETs utilize W/WSi bilayer gates, sidewall spacers, and rapid thermal annealing for controlling short channel effects. The 0.5 {mu}m E- HFETs (D-HFETs) have been demonstrated with transconductance of 425 mS/mm (265-310 mS/mm) and f{sub t} of 45-50 GHz. Ring oscillator gate delays of 19 ps with a power of 0.6 mW have been demonstrated using direct coupled FET … continued below

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Baca, A. G.; Sherwin, M. E.; Zolper, J. C.; Shul, R. J.; Briggs, R. D.; Heise, J. A. et al. April 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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A doped-channel heterostructure field effect transistor (H-FET) technology has been developed with self-aligned refractory gate processing and using both enhancement- and depletion-mode transistors. D-HFET devices are obtained with a threshold voltage adjust implant into material designed for E-HFET operation. Both E- and D-HFETs utilize W/WSi bilayer gates, sidewall spacers, and rapid thermal annealing for controlling short channel effects. The 0.5 {mu}m E- HFETs (D-HFETs) have been demonstrated with transconductance of 425 mS/mm (265-310 mS/mm) and f{sub t} of 45-50 GHz. Ring oscillator gate delays of 19 ps with a power of 0.6 mW have been demonstrated using direct coupled FET logic. These results are comparable to previous doped-channel HFET devices and circuits fabricated by selective reactive ion etching rather than ion implantation for threshold voltage adjustment.

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4 p.

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OSTI as DE97003209

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  • 191. meeting of the Electrochemical Society, Inc., Montreal (Canada), 4-9 May 1997

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  • Other: DE97003209
  • Report No.: SAND--97-0384C
  • Report No.: CONF-970517--4
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 459995
  • Archival Resource Key: ark:/67531/metadc686113

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  • April 1997

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  • July 25, 2015, 2:21 a.m.

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Baca, A. G.; Sherwin, M. E.; Zolper, J. C.; Shul, R. J.; Briggs, R. D.; Heise, J. A. et al. 0.5 μm E/D AlGaAs/GaAs heterostructure field effect transistor technology with DFET threshold adjust implant, article, April 1997; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc686113/: accessed February 18, 2025), University of North Texas Libraries, UNT Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.

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