Metal gettering by boron-silicide precipitates in boron-implanted silicon

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Description

We show that Fe, Co, Cu, and Au impurities in Si are strongly gettered to boron-silicide precipitates formed by supersaturation B implantation and annealing. Effective binding free energies relative to interstitial solution range form somewhat above 1 to more than 2 eV. The B-Si precipitates formed at temperatures {le}1100{degrees}C lack long range structural order but closely resemble and icosahedral B{sub 3}Si phase in composition, local bonding, and chemical potential. Evidence indicates that the metal atoms go into solution in the B-Si phase, and this is interpreted in terms of the novel bonding and structural characteristics of B-rich icosahedral compounds.

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16 p.

Creation Information

Myers, S.M.; Petersen, G.A.; Headley, T.J.; Michael, J.R.; Aselage, T.A. & Seager, C.H. September 1, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

We show that Fe, Co, Cu, and Au impurities in Si are strongly gettered to boron-silicide precipitates formed by supersaturation B implantation and annealing. Effective binding free energies relative to interstitial solution range form somewhat above 1 to more than 2 eV. The B-Si precipitates formed at temperatures {le}1100{degrees}C lack long range structural order but closely resemble and icosahedral B{sub 3}Si phase in composition, local bonding, and chemical potential. Evidence indicates that the metal atoms go into solution in the B-Si phase, and this is interpreted in terms of the novel bonding and structural characteristics of B-rich icosahedral compounds.

Physical Description

16 p.

Notes

OSTI as DE96015016

Source

  • IBMM `96: 10. international conference on ion beam modification of materials, Albuquerque, NM (United States), 1-6 Sep 1996

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  • Other: DE96015016
  • Report No.: SAND--96-0870C
  • Report No.: CONF-960994--3
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 369689
  • Archival Resource Key: ark:/67531/metadc685864

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Office of Scientific & Technical Information Technical Reports

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  • September 1, 1996

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  • July 25, 2015, 2:20 a.m.

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  • April 13, 2016, 2:58 p.m.

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Myers, S.M.; Petersen, G.A.; Headley, T.J.; Michael, J.R.; Aselage, T.A. & Seager, C.H. Metal gettering by boron-silicide precipitates in boron-implanted silicon, article, September 1, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc685864/: accessed December 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.