Nonvolatile field effect transistors based on protons and Si/SiO{sub 2}Si structures

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Recently, the authors have demonstrated that annealing Si/SiO{sub 2}/Si structures in a hydrogen containing ambient introduces mobile H{sup +} ions into the buried SiO{sub 2} layer. Changes in the H{sup +} spatial distribution within the SiO{sub 2} layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO{sub 2}/Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO{sub 2} structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory ... continued below

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5 p.

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Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G. et al. March 1, 1997.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Recently, the authors have demonstrated that annealing Si/SiO{sub 2}/Si structures in a hydrogen containing ambient introduces mobile H{sup +} ions into the buried SiO{sub 2} layer. Changes in the H{sup +} spatial distribution within the SiO{sub 2} layer were electrically monitored by current-voltage (I-V) measurements. The ability to directly probe reversible protonic motion in Si/SiO{sub 2}/Si structures makes this an exemplar system to explore the physics and chemistry of hydrogen in the technologically relevant Si/SiO{sub 2} structure. In this work, they illustrate that this effect can be used as the basis for a programmable nonvolatile field effect transistor (NVFET) memory that may compete with other Si-based memory devices. The power of this novel device is its simplicity; it is based upon standard Si/SiO{sub 2}/Si technology and forming gas annealing, a common treatment used in integrated circuit processing. They also briefly discuss the effects of radiation on its retention properties.

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5 p.

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INIS; OSTI as DE97003728

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  • 34. IEEE nuclear and space radiation effects conference, Snowmass, CO (United States), 21-25 Jul 1997

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  • Other: DE97003728
  • Report No.: SAND--97-0663C
  • Report No.: CONF-970711--6
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/486142 | External Link
  • Office of Scientific & Technical Information Report Number: 486142
  • Archival Resource Key: ark:/67531/metadc684820

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  • March 1, 1997

Added to The UNT Digital Library

  • July 25, 2015, 2:21 a.m.

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  • April 14, 2016, 7:57 p.m.

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Warren, W.L.; Vanheusden, K.; Fleetwood, D.M.; Schwank, J.R.; Winokur, P.S.; Knoll, M.G. et al. Nonvolatile field effect transistors based on protons and Si/SiO{sub 2}Si structures, report, March 1, 1997; Albuquerque, New Mexico. (https://digital.library.unt.edu/ark:/67531/metadc684820/: accessed April 25, 2019), University of North Texas Libraries, Digital Library, https://digital.library.unt.edu; crediting UNT Libraries Government Documents Department.