Pulsed-Laser Deposited Amorphous Diamond and Related Materials: Synthesis, Characterization, and Field Emission Properties

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Amorphous carbon films with variable sp{sup 3} content were produced by ArF (193nm) pulsed laser deposition. An in-situ ion probe was used to measure kinetic energy of C{sup +} ions. In contrast to measurements made as a function of laser fluence, ion probe measurements of kinetic energy are a convenient as well as more accurate and fundamental method for monitoring deposition conditions, with the advantage of being readily transferable for inter-laboratory comparisons. Electron energy loss spectroscopy (EELS) and spectroscopic ellipsometry measurements reveal that tetrahedral amorphous carbon (ta-C) films with the most diamond-like properties are obtained at the C ion kinetic ... continued below

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10 p.

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Baylor, L.R.; Geohegan, D.B.; Jellison, G.E., Jr.; Lowndes, D.H.; Merkulov, V.I. & Puretzky, A.A. January 23, 1999.

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Amorphous carbon films with variable sp{sup 3} content were produced by ArF (193nm) pulsed laser deposition. An in-situ ion probe was used to measure kinetic energy of C{sup +} ions. In contrast to measurements made as a function of laser fluence, ion probe measurements of kinetic energy are a convenient as well as more accurate and fundamental method for monitoring deposition conditions, with the advantage of being readily transferable for inter-laboratory comparisons. Electron energy loss spectroscopy (EELS) and spectroscopic ellipsometry measurements reveal that tetrahedral amorphous carbon (ta-C) films with the most diamond-like properties are obtained at the C ion kinetic energy of {approximately}90 eV. Film properties are uniform within a 12-15{degree} angle from the plume centerline. Tapping-mode atomic force microscope measurements show that films deposited at near-optimum kinetic energy are extremely smooth, with rms roughness of only {approximately} 1 {angstrom} over distances of several hundred nm. Field emission (FE) measurements show that ta-C does not appear to be a good electron emitter. After conditioning of ta-C films deposited on n-type Si a rather high turn-on voltage of {approximately}50 V/{micro}m was required to draw current of {approximately}1 nA to the probe. The emission was unstable and typically ceased after a few minutes of operation. The FE tests of ta-C and other materials strongly suggest that surface morphology plays a dominant role in the FE process, in agreement with conventional Fowler-Nordheim theory.

Physical Description

10 p.

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OSTI as DE00003629

Medium: P; Size: 10 pages

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  • SPIE Photonics West Conference, San Jose, CA (US), 01/23/1999--01/29/1999

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  • Report No.: ORNL/CP-101126
  • Report No.: KC 02 02 02 0
  • Grant Number: AC05-96OR22464
  • Office of Scientific & Technical Information Report Number: 3629
  • Archival Resource Key: ark:/67531/metadc684713

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  • January 23, 1999

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  • July 25, 2015, 2:20 a.m.

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  • April 6, 2017, 6:53 p.m.

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Baylor, L.R.; Geohegan, D.B.; Jellison, G.E., Jr.; Lowndes, D.H.; Merkulov, V.I. & Puretzky, A.A. Pulsed-Laser Deposited Amorphous Diamond and Related Materials: Synthesis, Characterization, and Field Emission Properties, article, January 23, 1999; Tennessee. (digital.library.unt.edu/ark:/67531/metadc684713/: accessed December 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.