Ion implantation and annealing studies in III-V nitrides

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Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies ... continued below

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12 p.

Creation Information

Zolper, J.C.; Pearton, S.J.; Williams, J.S.; Tan, H.H.; Karlicek, R.J. Jr. & Stall, R.A. December 31, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Ion implantation doping and isolation is expected to play an enabling role for the realization of advanced III-Nitride based devices. In fact, implantation has already been used to demonstrate n- and p-type doping of GaN with Si and Mg or Ca, respectively, as well as to fabricate the first GaN junction field effect transistor. Although these initial implantation studies demonstrated the feasibility of this technique for the III-Nitride materials, further work is needed to realize its full potential. After reviewing some of the initial studies in this field, the authors present new results for improved annealing sequences and defect studies in GaN. First, sputtered AlN is shown by electrical characterization of Schottky and Ohmic contacts to be an effect encapsulant of GaN during the 1,100 C implant activation anneal. The AlN suppresses N-loss from the GaN surface and the formation of a degenerate n{sup +}-surface region that would prohibit Schottky barrier formation after the implant activation anneal. Second, they examine the nature of the defect generation and annealing sequence following implantation using both Rutherford Backscattering (RBS) and Hall characterization. They show that for a Si-dose of 1 x 10{sup 16} cm{sup {minus}2} 50% electrical donor activation is achieved despite a significant amount of residual implantation-induced damage in the material.

Physical Description

12 p.

Notes

INIS; OSTI as DE97001935

Source

  • 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996

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  • Other: DE97001935
  • Report No.: SAND--96-2936C
  • Report No.: CONF-961202--48
  • Grant Number: AC04-94AL85000
  • DOI: 10.2172/432983 | External Link
  • Office of Scientific & Technical Information Report Number: 432983
  • Archival Resource Key: ark:/67531/metadc684660

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  • December 31, 1996

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  • July 25, 2015, 2:20 a.m.

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  • Aug. 23, 2016, 3:08 p.m.

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Zolper, J.C.; Pearton, S.J.; Williams, J.S.; Tan, H.H.; Karlicek, R.J. Jr. & Stall, R.A. Ion implantation and annealing studies in III-V nitrides, report, December 31, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc684660/: accessed December 17, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.