The detector properties and carrier dynamics of type IIa diamonds are reasonably well understood. The trends in the electron and hole mobilities have been characterized as a function of temperature, impurity content, electric field and carrier density. The carrier lifetimes are coupled through the nitrogen impurity. This leaves us with typical samples with collection distances of 20 to 50 micrometers. The detailed dynamics of the carriers can be modeled using a rate equation analysis. Much progress has been made in understanding the detector properties of diamond, but continued progress has been limited by the geologic processes used to make the ...
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Lawrence Livermore National Lab., CA (United States)
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The detector properties and carrier dynamics of type IIa diamonds are reasonably well understood. The trends in the electron and hole mobilities have been characterized as a function of temperature, impurity content, electric field and carrier density. The carrier lifetimes are coupled through the nitrogen impurity. This leaves us with typical samples with collection distances of 20 to 50 micrometers. The detailed dynamics of the carriers can be modeled using a rate equation analysis. Much progress has been made in understanding the detector properties of diamond, but continued progress has been limited by the geologic processes used to make the material, for example sample size and no synthesis control. CVD diamond promises to eliminate these restrictions.
Kania, D. R.Diamond radiation detectors I. Detector properties for IIa diamond,
article,
May 16, 1997;
California.
(digital.library.unt.edu/ark:/67531/metadc684416/:
accessed September 24, 2017),
University of North Texas Libraries, Digital Library, digital.library.unt.edu;
crediting UNT Libraries Government Documents Department.