Magnetic field dependence of up-converted photoluminescence in partially ordered GaInP{sub 2}/GaAs up to 23 T

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Description

The influence of a strong magnetic field on the up-converted photoluminescence (PL) spectra of partially ordered layers of GaInP{sub 2} grown on GaAs substrate have been investigated. The up-converted PL spectra exhibit 2 peaks. The position of the low energy peak is close to that of the peak observed in Pl spectra excited by above GaInP{sub 2} bandgap light while the other peak occurs at about 30 meV higher in energy. Both peaks show a linear dependence on B between 0 and 23 T suggesting that free carriers with effective masses of 0.084 m{sub 0} and 0.24m{sub 0} (m{sub 0} ... continued below

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7 p.

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Zeman, J.; Martinez, G.; Yu, P.Y. & Uchida, K. September 1, 1996.

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  • Zeman, J.
  • Martinez, G. MPIF/CNRS, Grenoble (France). Grenoble High Magnetic Field Lab.
  • Yu, P.Y. Lawrence Berkeley National Lab., CA (United States). Materials Science Div.
  • Uchida, K. Nippon Sanso Tsukuba Lab., Tsukuba City (Japan)

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Description

The influence of a strong magnetic field on the up-converted photoluminescence (PL) spectra of partially ordered layers of GaInP{sub 2} grown on GaAs substrate have been investigated. The up-converted PL spectra exhibit 2 peaks. The position of the low energy peak is close to that of the peak observed in Pl spectra excited by above GaInP{sub 2} bandgap light while the other peak occurs at about 30 meV higher in energy. Both peaks show a linear dependence on B between 0 and 23 T suggesting that free carriers with effective masses of 0.084 m{sub 0} and 0.24m{sub 0} (m{sub 0} is the free electron mass) are involved in these transitions. They interpret the low energy peak as originating from the recombination of localized holes with free electrons while the high energy peak is related to the recombination of localized electrons with free holes.

Physical Description

7 p.

Notes

OSTI as DE97003473

Source

  • International conference on physics of semiconductors, Berlin (Germany), 21-26 Jul 1996

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  • Other: DE97003473
  • Report No.: LBNL--39428
  • Report No.: CONF-960781--10
  • Grant Number: AC03-76SF00098
  • DOI: 10.2172/446412 | External Link
  • Office of Scientific & Technical Information Report Number: 446412
  • Archival Resource Key: ark:/67531/metadc684355

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Office of Scientific & Technical Information Technical Reports

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  • September 1, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:21 a.m.

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  • April 5, 2016, 5:01 p.m.

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Zeman, J.; Martinez, G.; Yu, P.Y. & Uchida, K. Magnetic field dependence of up-converted photoluminescence in partially ordered GaInP{sub 2}/GaAs up to 23 T, report, September 1, 1996; California. (digital.library.unt.edu/ark:/67531/metadc684355/: accessed November 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.