Interaction of cavities and dislocations in semiconductors

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Description

TEM of He-implanted Si-Ge and InGaAs indicates an attractive interaction between cavities and dislocations. Calculation indicates that cavities are attracted to dislocations through surrounding strain fields, and strong binding (100s of eV) occurs when a cavity intersects the core. In a strained SiGe/Si heterostructure, He implantation enhances relaxation rates and cavities bound to misfit dislocations show evidence of increasing relaxation at equilibrium by lowering dislocation energies. The interaction is expected for all crystalline solids and gives insight into voids in GaN/sapphire and bubbles in He-implanted metals.

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8 p.

Creation Information

Follstaedt, D.M.; Myers, S.M.; Lee, S.R.; Reno, J.L.; Dawson, R.L. & Han, J. December 31, 1996.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

TEM of He-implanted Si-Ge and InGaAs indicates an attractive interaction between cavities and dislocations. Calculation indicates that cavities are attracted to dislocations through surrounding strain fields, and strong binding (100s of eV) occurs when a cavity intersects the core. In a strained SiGe/Si heterostructure, He implantation enhances relaxation rates and cavities bound to misfit dislocations show evidence of increasing relaxation at equilibrium by lowering dislocation energies. The interaction is expected for all crystalline solids and gives insight into voids in GaN/sapphire and bubbles in He-implanted metals.

Physical Description

8 p.

Notes

OSTI as DE97001850

Source

  • 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996

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  • Other: DE97001850
  • Report No.: SAND--96-1714C
  • Report No.: CONF-961202--11
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 434343
  • Archival Resource Key: ark:/67531/metadc683657

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Office of Scientific & Technical Information Technical Reports

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  • December 31, 1996

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • April 13, 2016, 2:38 p.m.

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Follstaedt, D.M.; Myers, S.M.; Lee, S.R.; Reno, J.L.; Dawson, R.L. & Han, J. Interaction of cavities and dislocations in semiconductors, article, December 31, 1996; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc683657/: accessed November 24, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.