Antimonide based devices for thermophotovoltaic applications

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Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. GaInSb ternary devices were grown by metalorganic vapor phase epitaxy (MOVPE) with buffer layers to accommodate the lattice mismatch, and GaInAsSb lattice-matched quaternaries were grown by MOVPE. Improved devices are obtained when optical absorption occurs in the p-layer due to the longer minority carrier diffusion length. Thick emitter p/n devices are limited by surface recombination, with highest quantum efficiency and lowest dark current being achieved with epitaxially grown surface passivation layers on lattice-matched MOVPE quaternaries. Thin emitter/thick base, n/p devices are very promising, but ... continued below

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18 p.

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Hitchcock, C.W.; Gutmann, R.J.; Borrego, J.M.; Bhat, I.B. & Charache, G.W. December 1, 1998.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

Thermophotovoltaic (TPV) devices have been fabricated using epitaxial ternary and quaternary layers grown on GaSb substrates. GaInSb ternary devices were grown by metalorganic vapor phase epitaxy (MOVPE) with buffer layers to accommodate the lattice mismatch, and GaInAsSb lattice-matched quaternaries were grown by MOVPE. Improved devices are obtained when optical absorption occurs in the p-layer due to the longer minority carrier diffusion length. Thick emitter p/n devices are limited by surface recombination, with highest quantum efficiency and lowest dark current being achieved with epitaxially grown surface passivation layers on lattice-matched MOVPE quaternaries. Thin emitter/thick base, n/p devices are very promising, but require improved shallow high-quality n-type ohmic contacts. Diffused junction devices using quasi-binary substrates offer the possibility of good performance and low manufacturing cost.

Physical Description

18 p.

Notes

OSTI as DE99001010

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  • Other Information: PBD: Dec 1998

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  • Other: DE99001010
  • Report No.: KAPL-P--000134
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/325755 | External Link
  • Office of Scientific & Technical Information Report Number: 325755
  • Archival Resource Key: ark:/67531/metadc683376

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  • December 1, 1998

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 12:23 p.m.

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Hitchcock, C.W.; Gutmann, R.J.; Borrego, J.M.; Bhat, I.B. & Charache, G.W. Antimonide based devices for thermophotovoltaic applications, report, December 1, 1998; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc683376/: accessed June 23, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.