Suppression of self-interstitials in silicon during ion implantation via in-situ photoexcitation

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The influence of in-situ photoexcitation during low temperature implantation on self-interstitial agglomeration following annealing has been investigated using transmission electron microscopy (TEM). A reduction in the level of as-implanted damage determined by RBS and TEM occurs athermally during 150 keV self-ion implantation. The damage reduction following a 300 C anneal suggests that it is mostly divacancy related. Subsequent thermal annealing at 800 C resulted in the formation of (311) rod like defects or dislocation loops for samples with and without in-situ photoexcitation, respectively. Estimation of the number of self-interstitials bound by these defects in the sample without in-situ photoexcitation corresponds ... continued below

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7 p.

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Ravi, J.; Erokhin, Yu.; Christensen, K.; Rozgonyi, G.A.; Patnaik, B.K. & White, C.W. February 1, 1995.

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Description

The influence of in-situ photoexcitation during low temperature implantation on self-interstitial agglomeration following annealing has been investigated using transmission electron microscopy (TEM). A reduction in the level of as-implanted damage determined by RBS and TEM occurs athermally during 150 keV self-ion implantation. The damage reduction following a 300 C anneal suggests that it is mostly divacancy related. Subsequent thermal annealing at 800 C resulted in the formation of (311) rod like defects or dislocation loops for samples with and without in-situ photoexcitation, respectively. Estimation of the number of self-interstitials bound by these defects in the sample without in-situ photoexcitation corresponds to the implanted dose; whereas for the in-situ photoexcitation sample a suppression of {approx}2 orders in magnitude is found. The kinetics of the athermal annealing process are discussed within the framework of either a recombination enhanced defect reaction mechanism, or a charge state enhanced defect migration and Coulomb interaction.

Physical Description

7 p.

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INIS; OSTI as DE95009173

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  • Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 28 Nov - 9 Dec 1994

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  • Other: DE95009173
  • Report No.: CONF-941144--119
  • Grant Number: AC05-84OR21400
  • DOI: 10.2172/46696 | External Link
  • Office of Scientific & Technical Information Report Number: 46696
  • Archival Resource Key: ark:/67531/metadc683321

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  • February 1, 1995

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  • July 25, 2015, 2:21 a.m.

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  • June 27, 2016, 3:42 p.m.

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Ravi, J.; Erokhin, Yu.; Christensen, K.; Rozgonyi, G.A.; Patnaik, B.K. & White, C.W. Suppression of self-interstitials in silicon during ion implantation via in-situ photoexcitation, report, February 1, 1995; Tennessee. (digital.library.unt.edu/ark:/67531/metadc683321/: accessed August 18, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.