Experimental evidence of improved thermoelectric properties at 300K in Si/Ge superlattice structures

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The authors have found that it may be possible to obtain significant enhancement in ZT at 300 K, over conventional bulk SiGe alloys, through the use of Si/Ge Superlattice (SL) structures. The Seebeck coefficient in Si/Ge SL structures was observed to increase rapidly with decreasing SL period with no loss of electrical conductivity. The carrier mobilities in Si/Ge SLs were higher than in a comparable thin-film Si/Ge alloy. The best power factor of the short-period Si/Ge SLs is 112.2 {micro}W/K{sup 2} cm, over five-fold better than state-of-the-art n-type, bulk SiGe alloys. Approximately a two to four-fold reduction in thermal conductivity ... continued below

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6 p.

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Venkatasubramanian, R.; Colpitts, T.; Watko, E. & Malta, D. April 1, 1997.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

The authors have found that it may be possible to obtain significant enhancement in ZT at 300 K, over conventional bulk SiGe alloys, through the use of Si/Ge Superlattice (SL) structures. The Seebeck coefficient in Si/Ge SL structures was observed to increase rapidly with decreasing SL period with no loss of electrical conductivity. The carrier mobilities in Si/Ge SLs were higher than in a comparable thin-film Si/Ge alloy. The best power factor of the short-period Si/Ge SLs is 112.2 {micro}W/K{sup 2} cm, over five-fold better than state-of-the-art n-type, bulk SiGe alloys. Approximately a two to four-fold reduction in thermal conductivity in short-period SL structures, compared to bulk SiGe alloy, was observed. The authors estimate at least a factor of five improvement over current state-of-the-art SiGe alloys, in several Si/Ge SL samples with periodicity of {approximately}45 to 75 {angstrom}. The results of this study are promising, but tentative due to the possible effects of substrate and the developmental nature of the thermoelectric property measurements.

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6 p.

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INIS; OSTI as DE99001878

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  • Spring meeting of the Materials Research Society, San Francisco, CA (United States), 31 Mar - 4 Apr 1997

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  • Other: DE99001878
  • Report No.: KAPL-P--000155
  • Report No.: K--97030;CONF-970302--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/319833 | External Link
  • Office of Scientific & Technical Information Report Number: 319833
  • Archival Resource Key: ark:/67531/metadc682776

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  • April 1, 1997

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 18, 2016, 2:36 p.m.

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Venkatasubramanian, R.; Colpitts, T.; Watko, E. & Malta, D. Experimental evidence of improved thermoelectric properties at 300K in Si/Ge superlattice structures, report, April 1, 1997; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc682776/: accessed November 21, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.