Thermoelectric properties of ZnSb films grown by MOCVD

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The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 {micro}V/K at 220 C. The various growth conditions, including ... continued below

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6 p.

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Venkatasubramanian, R.; Watko, E. & Colpitts, T. April 1, 1997.

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  • Knolls Atomic Power Laboratory
    Publisher Info: Knolls Atomic Power Lab., Schenectady, NY (United States)
    Place of Publication: Schenectady, New York

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Description

The thermoelectric properties of metallorganic chemical vapor deposited (MOCVD) ZnSb films are reported. The growth conditions necessary to obtain stoichiometric ZnSb films and the effects of various growth parameters on the electrical conductivity and Seebeck coefficients of the films are described. The as-grown ZnSb films are p-type. It was observed that the growth of thicker ZnSb films lead to improved carrier mobilities and lower free-carrier concentrations. The Seebeck coefficient of ZnSb films was found to rise rapidly at approximately 160 to 170 C, with peak Seebeck coefficients as high as 470 {micro}V/K at 220 C. The various growth conditions, including the use of intentional dopants, to improve the Seebeck coefficients at room temperature and above, are discussed. A short annealing of the ZnSb films at temperatures of {approximately} 200 C resulted in reduced free-carrier levels and higher Seebeck coefficients at 300 K. Finally, ZT values based on preliminary thermal conductivity measurements using the 3-{omega} method are reported.

Physical Description

6 p.

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INIS; OSTI as DE99001893

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  • 1997 spring meeting of the Materials Research Society, San Francisco, CA (United States), 2 Apr 1997

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  • Other: DE99001893
  • Report No.: KAPL-P--000153
  • Report No.: K--97022;CONF-9704192--
  • Grant Number: AC12-76SN00052
  • DOI: 10.2172/319831 | External Link
  • Office of Scientific & Technical Information Report Number: 319831
  • Archival Resource Key: ark:/67531/metadc682772

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Reports, articles and other documents harvested from the Office of Scientific and Technical Information.

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Creation Date

  • April 1, 1997

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • May 16, 2016, 6:08 p.m.

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Venkatasubramanian, R.; Watko, E. & Colpitts, T. Thermoelectric properties of ZnSb films grown by MOCVD, report, April 1, 1997; Schenectady, New York. (digital.library.unt.edu/ark:/67531/metadc682772/: accessed September 24, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.