Band Structure of InGaAsN Alloys and Effects of Presure

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InGaAsN is a new semiconductor alloy system with the remarkable property that the inclusion of only 2% nitrogen reduces the bandgap by more than 30%. In order to help understand the physical origin of this extreme deviation from the typically observed nearly linear dependence of alloy properties on concentration, we have investigated the pressure dependence of state energies using both experimental and theoretical methods. the excited We report measurements of the low temperature photoluminescence of the material for pressures between ambient and 110 kbar. We also describe a simple, density- functional-theory-based approach to calculating the pressure dependence of low lying ... continued below

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Allerman, A.A.; Jones, E.D.; Kurtz, S.R.; Modine, N.A.; Tozer, S.T.; Wei, X. et al. January 20, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
    Place of Publication: Albuquerque, New Mexico

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InGaAsN is a new semiconductor alloy system with the remarkable property that the inclusion of only 2% nitrogen reduces the bandgap by more than 30%. In order to help understand the physical origin of this extreme deviation from the typically observed nearly linear dependence of alloy properties on concentration, we have investigated the pressure dependence of state energies using both experimental and theoretical methods. the excited We report measurements of the low temperature photoluminescence of the material for pressures between ambient and 110 kbar. We also describe a simple, density- functional-theory-based approach to calculating the pressure dependence of low lying excitation energies for low concentration alloys. The theoretically predicted pressure dependence of the bandgap is in excellent agreement with the experimental data. Based on the results of our calculations, we suggest an explanation for the strongly non-linear pressure dependence of the bandgap that, surprisingly, does not involve a nitrogen impurity state.

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  • Journal Name: Physical Review Letters

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  • Other: DE00003216
  • Report No.: SAND99-0125J
  • Grant Number: AC04-94AL85000
  • Office of Scientific & Technical Information Report Number: 3216
  • Archival Resource Key: ark:/67531/metadc682593

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  • January 20, 1999

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  • July 25, 2015, 2:20 a.m.

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  • Nov. 22, 2016, 8:51 p.m.

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Allerman, A.A.; Jones, E.D.; Kurtz, S.R.; Modine, N.A.; Tozer, S.T.; Wei, X. et al. Band Structure of InGaAsN Alloys and Effects of Presure, article, January 20, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc682593/: accessed June 19, 2018), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.