Stability of Trapped Electrons in SiO(2)

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Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of {approximately}3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy ... continued below

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13 p.

Creation Information

Fleetwood, D.M. & Winokur, P.S. January 29, 1999.

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  • Sandia National Laboratories
    Publisher Info: Sandia National Labs., Albuquerque, NM, and Livermore, CA (United States)
    Place of Publication: Albuquerque, New Mexico

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Description

Thermally stimulated current and capacitance voltage methods are used to investigate the thermal stability of trapped electrons associated with radiation-induced trapped positive charge in metal-oxide-semiconductor capacitors. The density of deeply trapped electrons in radiation-hardened 45 nm oxides exceeds that of shallow electrons by a factor of {approximately}3 after radiation exposure, and by up to a factor of 10 or more during biased annealing. Shallow electron traps anneal faster than deep traps, and seem to be at least qualitatively consistent with the model of Lelis et al. Deeper traps maybe part of a fundamentally distinct dipole complex, and/or have shifted energy levels that inhibit charge exchange with the Si.

Physical Description

13 p.

Notes

INIS; OSTI as DE00003229

Medium: P; Size: 13 pages

Source

  • Journal Name: Applied Physics Letters; Other Information: Submitted to Applied Physics Letters

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  • Report No.: SAND99-0254J
  • Grant Number: AC04-94AL85000
  • DOI: 10.1063/1.123982 | External Link
  • Office of Scientific & Technical Information Report Number: 3229
  • Archival Resource Key: ark:/67531/metadc681771

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  • January 29, 1999

Added to The UNT Digital Library

  • July 25, 2015, 2:20 a.m.

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  • April 7, 2017, 1:13 p.m.

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Fleetwood, D.M. & Winokur, P.S. Stability of Trapped Electrons in SiO(2), article, January 29, 1999; Albuquerque, New Mexico. (digital.library.unt.edu/ark:/67531/metadc681771/: accessed September 23, 2017), University of North Texas Libraries, Digital Library, digital.library.unt.edu; crediting UNT Libraries Government Documents Department.